Aluminum Nitride (AlN) Wafer 氮化

n Introduction 产品介绍 Aluminum Nitride (AlN) is a material that has a high thermal conductivity, making it ideal for use in high-temperature applications. It is often used as a substrate material for due to its excellent thermal, electrical and mechanical properties. Additionally, AlN wafer has a high resistance to thermal shock and high thermal stability, making it an ideal choice for high-temperature applications in electronic and optoelectronic devices. AlN wafer are widely used in the manufacture of various electronic components, including highpower microwave devices, high-temperature sensors,...

n Definition and Characteristics 定义和特性 • High thermal conductivity (170~230 W/m.K), up to 9.5 times than that of Alumina. 热导率高（170~230 W/m.K），比氧化铝高出 9.5 倍。 • Similar coefficient of thermal expansion to that of silicon (Si). To achieve high reliability of Si chip and thermal heat cycling (thermal shock). 热膨胀系数与硅 (Si) 相近。实现 Si 芯片和热循环（热冲击）的高可靠性。 • High electrical insulation, and Low dielectric constant. 电绝缘性高，介电常数低。 • High mechanical strength (450MPa). 机械强度高（450

Innovacera provides a range of standard aluminum nitride(AlN) wafer and substrates, such as 6”, 8” Aluminum Nitride (AlN) Wafer and 2”, 3”, 4” and 12” aluminum nitride substrates. AlN Wafers and Substrates can be produced in various thicknesses from 0.125mm to 3mm with polished or lapped sides, customized sizes or request are also available. 英诺华提供一系列标准氮化铝 (AlN) 晶片和基板，例如 6 英寸、8 英寸氮化铝 (AlN) 晶片和 2 英寸、3 英寸、4 英寸和 12 英寸氮化铝基板。AlN 晶片和基板可生产为各种厚度，从 0.125 毫米到 3 毫米， 侧面经过抛光或研磨，也可提供定制尺寸或要求。 Bulk Density 体积密度 Flexural Strength 抗弯强度 Compressive Strength 抗压强度 Young’s Modulus 杨氏模量 Volume Resistivity 体积电阻率

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