Overview of Aluminum Nitride (AlN) Wafers

Aluminum Nitride (AlN) is a material known for its high thermal conductivity and excellent thermal stability, making it ideal for high-temperature applications. It is widely used as a substrate material in electronics due to its superior thermal, electrical, and mechanical properties. AlN wafers are particularly suitable for electronic devices such as high-power microwave devices, high-temperature sensors, high-frequency transistors, LEDs, and laser diodes.

Key Properties of AlN

• High thermal conductivity ranging from 170 to 230 W/m·K, up to 9.5 times that of alumina.
• Thermal expansion coefficient similar to silicon, ensuring high reliability and thermal shock resistance for Si chips.
• Excellent electrical insulation with low dielectric constant.
• High mechanical strength (around 450 MPa).
• Superior corrosion resistance against molten metals.
• High purity and non-toxic.

Product Range and Specifications

Innovacera offers a broad range of standard AlN wafers and substrates in sizes including 2", 3", 4", 6", 8", and 12" diameters, with thicknesses from 0.125 mm to 3 mm. The wafer edges are finished by polishing or lapping, and custom sizes are available upon request.

Material Grades and Characteristics

Applications

• Semiconductor manufacturing
• Microwave and RF devices
• Optoelectronic devices
• Thermal management solutions
• High-temperature electronic equipment
• LED packaging for circuit cooling and protection
• Power modules such as MOSFET and IGBT

Dimensional and Quality Specifications for 6" and 8" Wafers

• Thermal conductivity: >170, >200, >220 W/(m·K)
• Thermal expansion coefficient: 4–6 ppm/K (300–1200K)
• Sintering aid: Y2O3
• Diameter tolerance: ±0.25 mm
• Notch depth: 1.0 +0.25/-0 mm
• Notch angle: 90° +5/-2°
• Thickness: 400 ± 15 μm
• Thickness tolerance: Premium 0.0127 mm, Standard 0.0254 mm
• Total thickness variation (TTV): Premium 5 μm, Standard 10 μm
• BOW: < ±30 μm
• Warp: < 50 μm
• Surface roughness (Ra): < 50 nm

Surface Finishing Options

• L2S: Double-side polished
• P1S: One side polished + one side lapped
• P2S: Double-side lapped

Available Sizes and Thicknesses

A comprehensive list of square and circular AlN wafers and substrates is provided, ranging from 25.4 mm square to 500 mm diameter, with thicknesses from 0.005 mm up to 25 mm. Each size is available with different surface finishes (L2S, P1S, P2S) to meet various application requirements.

Manufacturer Information

Produced by XIAMEN INNOVACERA ADVANCED MATERIALS CO., LTD, located in Xiamen, China. Contact details include phone: 0086 592 558 9730 and email: [email protected].