PMST Power Devices Static Parameter Testing System Solution https://www.precisesmu.com Overview IGBT (Insulated Gate bipolar junction transistor) is the core device of power control and power conversion. It is a composite fully Precise PMST Power Devices Static Parameter Testing System controlled voltage driven power semiconductor device composed of BJT (bipolar junction transistor) and MOS (Insulated Gate Field Effect Transistor).It has the characteristics of high input impedance, low conduction voltage drop, high-speed switching, and low loss in conduction state, and occupies a dominant position in high frequency high and medium power applications. Precise provide a complete set of testing fixture solutions for different packaging types of silicon based power semiconductors, such as IGBT, SiC, MOS, GaN, etc.Can be used for testing DUTs such as TO transistors and half bridge modules. Figure:Fixture for Different Packaging Devices Figure:Schematic diagram of fixture installation For more solutions and testing connection guidelines, please contact us asap! Tel:+8613615888735 Email:[email protected] Official Website