VS-E5TX3006THN3
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Catalog excerpts

VS-E5TX3006THN3 - 1

Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® G5 FEATURES Base cathode • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature 1 • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV on-board battery chargers PRIMARY CHARACTERISTICS IF(AV) Circuit configuration MECHANICAL DATA Case: TO-220AC 2L Molding compound meets UL 94 V-0 flammability rating ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Repetitive peak forward current Operating junction and storage temperature ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage TEST CONDITIONS Reverse leakage current Junction capacitance Series inductance Measured to lead 5 mm from package body Revision: 28-Jun-2021 Document Number: 96827 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ww

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VS-E5TX3006THN3 - 2

Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER TEST CONDITIONS IF = 1.0 A,dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Peak recovery current Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case TEST CONDITIONS Maximum junction and storage temperature range Marking device Mounting torque Revision: 28-Jun-2021 Document Number: 96827 2 For technical questions within your region: DiodesAmericas@vishay.com,...

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VS-E5TX3006THN3 - 3

IF - Instantaneous Forward Current (A) VF - Forward Voltage Drop (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Allowable Solder Pad Temperature (°C) Fig. 1 - Typical Forward Voltage Drop Characteristics 130 120 110 Square wave (D = 0.50) rated VR applied IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) IF(AV) - Average Forward Current (A) Fig. 5 - Average Power Loss vs. Average Forward Current Revision: 28-Jun-2021 Document Number:...

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VS-E5TX3006THN3 - 4

Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC - Characteristics Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt Revision: 28-Jun-2021 Document Number: 96827 4 For technical questions within your region: DiodesAmericas@vishay.com,...

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VS-E5TX3006THN3 - 5

Vishay Semiconductors In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 12 - Typical Reverse Recovery Current vs. dIF/dt Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative...

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VS-E5TX3006THN3 - 6

Vishay Semiconductors ORDERING INFORMATION TABLE Device code Vishay Semiconductors product Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E5TX3006THN3 MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model Revision: 28-Jun-2021 Document Number: 96827 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE....

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VS-E5TX3006THN3 - 7

Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone...

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VS-E5TX3006THN3 - 8

Legal Disclaimer Notice www.vishay.com Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any...

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