Catalogs >
VISHAY >
VS-E5TH1506-M3

VS-E5TH1506-M3
7Pages

Catalog excerpts

Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt® G5 FEATURES Base cathode • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature 1 • Polyimide passivation 1 Cathode • Meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. PRIMARY CHARACTERISTICS IF(AV) Circuit configuration MECHANICAL DATA Case: 2L TO-220AC Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Repetitive peak reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak surge current Operating junction and storage temperature ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage TEST CONDITIONS Reverse leakage current Junction capacitance Series inductance Measured to lead 5 mm from package body Revision: 29-Sep-2020 Document Number: 96751 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Open the catalog to page 1

Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time TEST CONDITIONS Peak recovery current Peak recovery current Reverse recovery time Reverse recovery charge Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case TEST CONDITIONS Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style 2L TO-220AC IF - Instantaneous Forward Current (A) Marking device VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics, Per Leg...

Open the catalog to page 2

Allowable Solder Pad Temperature (°C) Vishay Semiconductors 150 140 Square wave (D = 0.50) rated VR applied IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Per Leg Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current, Per Leg Average Power Loss (W) IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics, Per Leg ZthJC - Thermal Impedance Junction to Case (°C/W) t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case, Per Leg Revision: 29-Sep-2020 Document Number:...

Open the catalog to page 3

In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt, Per Leg In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt, Per Leg In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 9 -...

Open the catalog to page 4

Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code Vishay Semiconductors product Package: T = 2L TO-220AC H = hyperfast recovery Environmental digit: -M3 = halogen-free, RoHS-compliant, and...

Open the catalog to page 5

Outline Dimensions www.vishay.com Vishay Semiconductors 2L TO-220AC DIMENSIONS in millimeters and inches A 0.014 M B A M Base metal Conforms to JEDEC® outline TO-220AC Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3, and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within...

Open the catalog to page 6

Legal Disclaimer Notice www.vishay.com Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any...

Open the catalog to page 7