VS-E5PX6006LHN3
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Catalog excerpts

VS-E5PX6006LHN3 - 1

Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® G5 FEATURES Base cathode • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature 3 • Polyimide passivation • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) Circuit configuration Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV on-board battery chargers DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current TC = 25 °C, tp = 10 ms, sine wave both anodes, (1) and (3) connected Repetitive peak forward current Operating junction and storage temperature ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage TEST CONDITIONS Reverse leakage current Junction capacitance Series inductance Measured to lead 5 mm from package body Revision: 28-Oct-2021 Document Number: 96821 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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VS-E5PX6006LHN3 - 2

Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER TEST CONDITIONS Peak recovery current Peak recovery current Reverse recovery time Reverse recovery charge Reverse recovery time Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case TEST CONDITIONS Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style: TO-247AD 2L IF - Instantaneous Forward Current (A) Marking device VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics VR -...

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VS-E5PX6006LHN3 - 3

Allowable Solder Pad Temperature (°C) Vishay Semiconductors 130 120 110 Square wave (D = 0.50) rated VR applied IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case Revision: 28-Oct-2021 Document Number: 96821 3 For technical questions...

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VS-E5PX6006LHN3 - 4

In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt 1000 In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 9 - Typical Reverse Recovery Current...

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VS-E5PX6006LHN3 - 5

Fig. 13 - Reverse Recovery Waveform and Definitions Notes (1) di /dt - rate of change of current through zero crossing F (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % t 10 % di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code Vishay Semiconductors product Circuit configuration E = single diode FRED Pt® Gen 5 P = TO-247 package Process type: X = hyperfast recovery Current...

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VS-E5PX6006LHN3 - 6

Legal Disclaimer Notice www.vishay.com Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any...

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