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VS-E5PH6006LHN3

VS-E5PH6006LHN3

VS-E5PH6006LHN3

Product catalog summary
Product Overview: The VS-E5PH6006LHN3 is a hyperfast rectifier designed by Vishay Semiconductors, optimized for high-speed operation with a maximum operating junction temperature of 175°C. It is suitable for soft switched and resonant converters, as well as medium frequency hard switching converters, particularly in EV/HEV on-board battery chargers.
Key Features:
  • Hyperfast and optimized Qrr
  • Low forward voltage drop and switching losses
  • 175°C maximum operating junction temperature
  • Polyimide passivation
  • AEC-Q101 qualified
Mechanical Data: The device is housed in a TO-247AD 2L package with matte tin plated leads, meeting UL 94 V-0 flammability rating.
Primary Characteristics:
  • Average forward current (IF(AV)): 60 A
  • Repetitive peak reverse voltage (VRRM): 600 V
  • Forward voltage (VF) at IF = 60 A, TJ = 125°C: 1.2 V
  • Reverse recovery time (trr): 29 ns
  • Non-repetitive peak surge current (IFSM): 500 A
Absolute Maximum Ratings: The device can operate within a temperature range of -55 to +175°C, with a repetitive peak forward current of 120 A at 20 kHz.
Electrical Specifications: At TJ = 25°C, the breakdown voltage is 600 V, and the forward voltage ranges from 1.4 to 1.7 V at 60 A. The reverse leakage current is up to 25 μA at rated VR.
Dynamic Recovery Characteristics: The reverse recovery time varies with conditions, being 29 ns at IF = 1 A and 54 ns at IF = 60 A, with corresponding peak recovery currents and charges.
Thermal-Mechanical Specifications: The thermal resistance from junction to case is 0.63 °C/W, and the device weighs approximately 5.5 g.
Graphs and Figures: The document includes various graphs illustrating forward voltage drop, reverse current, junction capacitance, power loss, and thermal impedance characteristics.
Ordering Information: The product is available in antistatic plastic tubes, with a minimum order quantity of 500 units.
Disclaimer: The document includes a disclaimer noting that specifications are subject to change and that Vishay disclaims liability for errors or inaccuracies.
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Catalog excerpts

VS-E5PH6006LHN3-1

Vishay Semiconductors Hyperfast Rectifier, 60 A FRED Pt® G5 FEATURES Base cathode • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature 3 • Polyimide passivation • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) Circuit configuration Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV on-board battery chargers DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES MECHANICAL DATA Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Repetitive peak forward current Operating junction and storage temperature ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage TEST CONDITIONS Reverse leakage current Junction capacitance Series inductance Measured to lead 5 mm from package body Revision: 17-Mar-2021 Document Number: 96764 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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VS-E5PH6006LHN3-2

Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time TEST CONDITIONS Peak recovery current Peak recovery current Reverse recovery time Reverse recovery charge Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case TEST CONDITIONS Weight Mounting torque Maximum junction and storage temperature range IF - Instantaneous Forward Current (A) Marking device VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical...

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VS-E5PH6006LHN3-3

Allowable Solder Pad Temperature (°C) Vishay Semiconductors 180 170 160 150 DC 140 130 Square wave (D = 0.50) rated VR applied IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) IF(AV) - Average Forward Current (A) Fig. 5 - Average Power Loss vs. Average Forward Current ZthJC - Thermal Impedance Junction to Case (°C/W) t1 - Rectangular Pulse Duration (s) Fig. 6 - Thermal Impedance ZthJC Characteristics Revision: 17-Mar-2021 Document Number: 96764 3 For technical...

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VS-E5PH6006LHN3-4

Vishay Semiconductors In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 9 - Typical Reverse Recovery...

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VS-E5PH6006LHN3-5

Fig. 13 - Reverse Recovery Waveform and Definitions Notes diF/dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % (1) di(rec)M/dt - peak rate of change of current during tb portion of trr ORDERING INFORMATION TABLE Device code Vishay Semiconductors product Circuit configuration E = single diode FRED Pt® Gen 5 P = TO-247 package Process type: H = hyperfast recovery Current rating 60...

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VS-E5PH6006LHN3-6

Legal Disclaimer Notice www.vishay.com Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular...

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