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VS-E5PH3006L-N3

VS-E5PH3006L-N3
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Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt® G5 FEATURES Base cathode • Best in class forward voltage drop and switching losses trade off • Optimized for high speed operation • 175 °C maximum operating junction temperature 3 • Polyimide passivation • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS Featuring a unique combination of low conduction and switching losses, this rectifier is the right choice for soft switched and resonant converters, as well as medium frequency hard switching converters. This device is specifically designed to improve efficiency of high speed LLC output rectification stages of EV / HEV battery charging stations and high frequency stages of UPS applications. PRIMARY CHARACTERISTICS IF(AV) Circuit configuration Case: TO-247AD 2L Molding compound meets UL 94 V-0 flammability rating MECHANICAL DATA Terminal: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Repetitive peak forward current Operating junction and storage temperature ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage Reverse leakage current Junction capacitance Series inductance Measured to lead 5 mm from package body Revision: 05-Feb-2021 Document Number: 96623 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ww

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Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER TEST CONDITIONS Peak recovery current Peak recovery current Reverse recovery time Reverse recovery charge Reverse recovery time Reverse recovery charge THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction-to-case TEST CONDITIONS Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style: TO-247AD 2L IF - Instantaneous Forward Current (A) Marking device VF - Forward Voltage Drop (V) Fig. 1 - Forward Voltage Drop Characteristics VR -...

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Allowable Solder Pad Temperature (°C) Vishay Semiconductors 140 130 120 110 Square wave (D = 0.50) rated VR applied IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Average Power Loss (W) IF(AV) - Average Forward Current (A) Fig. 5 - Forward Power Loss Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) t1 - Rectangular Pulse Duration (s) Fig. 6 - Transient Thermal Impedance, Junction to Case Revision: 05-Feb-2021 Document Number: 96623 3 For technical...

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In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Reverse Recovery Time vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 8 - Typical Reverse Recovery Charge vs. dIF/dt Fig. 11 - Typical Reverse Recovery Charge vs. dIF/dt In this dI/dt range curves are not dependent from applied IF switching current, from 0.5 to 2 times IF(AV) rating Fig. 9 - Typical Reverse Recovery Current vs....

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Fig. 13 - Reverse Recovery Waveform and Definitions Notes diF/dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t - reverse recovery time measured from t , crossing point of negative going I , to point t rr 0 F 10%, 0.1 IRRM (4) Q - area under curve defined by t and t rr 0 10 % (1) di(rec)M/dt - peak rate of change of current during tb portion of trr Revision: 05-Feb-2021 Document Number: 96623 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO...

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Vishay Semiconductors ORDERING INFORMATION TABLE Device code Vishay Semiconductors product Package: L = long lead (TO-247AD) Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information Revision: 05-Feb-2021 Document Number: 96623 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT...

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Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of...

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Legal Disclaimer Notice www.vishay.com Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any...

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