Bare Die
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Catalog excerpts

Bare Die - 1

Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Products in Several Versions to Accommodate a Wide Variety of Assembly Techniques and Applications Schottky Diodes Standard/Fast Diodes Switching Diodes Ultrafast Diodes Zener Diodes Resources • For technical support contact diewafer@vishay.com • For more information contact DiodesAmericas@vishay.com, DiodesAsia@vishay.com, or DiodesEurope@vishay.com One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components selector guide This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Bare Die - 2

Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Vishay supplies a wide range of small-signal and power diodes in bare die and wafer form: • Schottky diodes • Fred Pt® Ultrafast diodes • HEXFRED® Ultrafast diodes • TVS diodes • Zener diodes • ESD protection diodes • Switching diodes • High Voltage Standard/Fast diodes • Thyristors Packing Types Vishay delivers its bare die products in several versions to accommodate a wide variety of assembly techniques and applications: • Unsawn wafer: the wafers are delivered in a sealed bag and die are not...

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Bare Die - 3

Diodes - A Wide Range of Bare Die and Wafer Form Products Small-Signal and Power Diodes Bare Die Naming Rules for Schottky, FRED Pt®, HEXFRED® and TVS Diodes SC Product Type Chip size in mils SX = Planar Schottky Fab1 TY = TMBS® Schottky Fab1 TV = PAR® TVS SC = Planar Schottky Fab2 FD = FRED Pt Ultrafast H2 = HEXFRED Ultrafast Gen2 H3 = HEXFRED Ultrafast Gen3 For Schottky R = Tj max. 125 °C S = Tj max. 150 °C H = Tj max. 175 °C T = Gen5 Schottky For TVS PAR B = Named as Vbr T = Named as Vwm L = Load Dump Rectifier named as Vbr Surface Metal Wafer Diameter A = Wirebondable Topside: Ti/Al,...

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Bare Die - 4

Diodes - A Wide Range of Bare Die and Wafer Form Products Digit always present Small-Signal and Power Diodes Digit might miss (see legend) DIODES Bare Die Naming Rule for Thyristors VS 180 Chip Size in Mils Surface Metal Passivation Process B = Wirebondable Topside: 100% Al Backside: Cr/Ni/Ag Vishay Semiconductor D = Wirebondable Topside: 100% Al Backside: Cr/Ni/Ag CB=Probed Uncut Die (Wafer In Box) None=Probed Die in Chip Carrier H = Solderable Topside: Cr/Ni/Ag Backside: Cr/Ni/Ag S = Solderable Topside: Cr/Ni/Ag Backside: Cr/Ni/Ag selector guide This document is subject to change without...

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Bare Die - 5

Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Diode Features Schottky diodes are designed for very fast switching between the forward and the reverse direction of the diode. Their metal-semiconductor junction provides a low forward voltage drop compared to p-n diodes. Schottky diodes can be used for general-purpose applications but their low voltage drops at forward biases makes them useful whenever conduction losses are key to ensure high efficiency and for protection of MOS devices. Vishay Portfolio • ishay offers one of broadest range of Schottky diodes in the...

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Bare Die - 6

Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Die/N List Die Front Side Back Side Thickness Metal Metal (mils) Wafer Diameter (inches) (1) In the Part Number “x” stands for the delivery version. Contact Vishay to check which among Die-on-Wafer, Die-on-Film, Die-in-tape and reel, Die-in-Waffle-Pack are available for chosen part number. (2) At IF of discrete packaged part or based on technology. Review datasheets for details. (3) Specs taken from datasheet of packaged part or from measurements in package. selector guide This document is subject to change without notice....

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Bare Die - 7

Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Die/N List Die Front Side Back Side Thickness Metal Metal (mils) Wafer Diameter (inches) Small signal (1) In the Part Number “x” stands for the delivery version. Contact Vishay to check which among Die-on-Wafer, Die-on-Film, Die-in-tape and reel, Die-in-Waffle-Pack are available for chosen part number. (2) At IF of discrete packaged part or based on technology. Review datasheets for details. (3) Specs taken from datasheet of packaged part or from measurements in package. selector guide This document is subject to change...

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Bare Die - 8

Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Die/N List Die Front Side Back Side Thickness Metal Metal (mils) Wafer Diameter (inches) (1) In the Part Number “x” stands for the delivery version. Contact Vishay to check which among Die-on-Wafer, Die-on-Film, Die-in-tape and reel, Die-in-Waffle-Pack are available for chosen part number. (2) At IF of discrete packaged part or based on technology. Review datasheets for details. (3) Specs taken from datasheet of packaged part or from measurements in package. selector guide This document is subject to change without notice....

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Bare Die - 9

Diodes - A Wide Range of Bare Die and Wafer Form Products Schottky Die/N List Die Front Side Back Side Thickness Metal Metal (mils) Wafer Diameter (inches) (1) In the Part Number “x” stands for the delivery version. Contact Vishay to check which among Die-on-Wafer, Die-on-Film, Die-in-tape and reel, Die-in-Waffle-Pack are available for chosen part number. (2) At IF of discrete packaged part or based on technology. Review datasheets for details. (3) Specs taken from datasheet of packaged part or from measurements in package. selector guide This document is subject to change without notice....

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Bare Die - 10

Diodes - A Wide Range of Bare Die and Wafer Form Products Ultrafast Diode Features These diodes are specifically designed to work in switching operations. Their silicon epitaxial planar technology features a design optimized for reliable performance. They are the best diodes for coupling with IGBTs in power supply inverter stages and for boosting the voltage in PFC stage. Vishay Portfolio • Vishay offers the industry’s broadest range of Ultrafast diodes in the market, ranging from 200 V to 1200 V • 150 ºC (HEXFRED®) and 175 ºC (FRED Pt®) maximum junction temperatures are available • Vishay...

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