10RIA Series Vishay Semiconductors Medium Power Thyristors (Stud Version), 10 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package • Low thermal resistance • Metric threads version available • Types up to 1200 V VDRM/VRRM TO-208AA (TO-48) • RoHS compliant • Designed and qualified for industrial and consumer level TYPICAL APPLICATIONS • Medium power switching PRODUCT SUMMARY • Phase control applications • Can be supplied to meet stringent military, aerospace and other high reliability requirements MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(RMS) ITSM Document Number: 93689 Revision: 06-Jun-08 For technical questions, contact: [email protected]

10RIA Series Medium Power Thyristors (Stud Version), 10 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGE CODE VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE (2) V IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V TYPE NUMBER Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs (2) For voltage pulses with t 5 ms p ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current TEST CONDITIONS 240...

10RIA Series Medium Power Thyristors (Stud Version), 10 A Vishay Semiconductors SWITCHING PARAMETER TEST CONDITIONS VDRM 600 V Maximum rate of rise of turned-on current TJ = TJ maximum, VDM = Rated VDRM Gate pulse = 20 V, 15 , tp = 6 µs, tr = 0.1 µs maximum ITM = (2 x rated dI/dt) A Typical turn-on time Typical reverse recovery time TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, dI/dt = - 10 A/µs TJ = TJ maximum, ITM = IT(AV), tp > 200 µs, VR = 100 V, dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % VDRM, gate bias 0 V to 100 W Typical turn-off time Note • tq = 10 µs up to 600 V, tq = 30 µs up...

10RIA Series Medium Power Thyristors (Stud Version), 10 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction and storage temperature range TEST CONDITIONS Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink Mounting surface, smooth, flat and greased Mounting torque Lubricated threads (Non-lubricated threads) Case style See dimensions - link at the end of datasheet Approximate weight RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS Conduction Angle Maximum Allowable...

10RIA Series Vishay Semiconductors Maximum Average On-state Power Loss (W) Medium Power Thyristors (Stud Version), 10 A Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics Conduction Period Average On-state Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave...

10RIA Series Medium Power Thyristors (Stud Version), 10 A Instantaneous On-state Current (A) Vishay Semiconductors Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - Forward Voltage Drop Characteristics 10 Steady State Value R thJC = 1.85 K/W (DC Operation) Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 10V, 20ohms tr <=0.5 µs, tp >= 6 µs b) Recommended load line for <=30% rated di/dt : 10V, 65ohms 10 tr<=1 µs, tp >= 6 µs Instantaneous Gate Voltage (V) 10RIA Series...

10RIA Series Medium Power Thyristors (Stud Version), 10 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code Current code Essential part number Voltage code x 10 = VRRM (see Voltage Ratings table) None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A M = Stud base TO-208AA (TO-48) M6 x 1 Critical dV/dt: None = 300 V/µs (standard value) S90 = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions Document Number: 93689 Revision: 06-Jun-08 For technical questions, contact: [email protected]

Outline Dimensions Vishay Semiconductors TO-208AA (TO-48) DIMENSIONS in millimeters (inches) Ø 1.7/1.8 (Ø 0.06/0.07) Ø 3.9/4.1 (Ø 0.15/0.16) Document Number: 95333 Revision: 07-Jul-08 For technical questions, contact: [email protected]

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