Vigo Catalog 2020/2021
147Pages

INFRARED DETECTORS AND DETECTION MODULES – SELECTED LINE We present VIGO most popular infrared detectors and integrated detection modules. These devices are suitable for both laboratory research as well as tests, prototyping, R&D stage and in a variety of MWIR and LWIR industrial applications. Main features › High performance and reliability › Very good repeatability in mass production › Cost-effective sollutions › Fast deli

Selected infrared detectors Photo Detection module type Detection module type Selected infrared detection modules Photo LabM series – laboratory, programmable Detection module type UHSM series – ultra high-speed Detection module type To get the information about specific parameters and applications of each detector and detection module type please see particul

Infrared detectors - Selected Line PVI-4-1×1-TO39-NW-36 2.4 – 4.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector PVI-4-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high...

Infrared detectors - Selected Line Bottom view Immersion microlens shape Optical area AO, mm×mm Reverse bias (optional) Chassis ground Φ Φ– acceptance angle R – hyperhemisphere microlens radius A – distance from the bottom of hyperhemisphere microlens to the focal plane › Standard ohmmeter may overbias and damage the detector. Bias of 10 mV can be used for resistance measurements. › Operation in 10% to 80% humidity and -20°C to 30°C ambient temperature. › Beam power limitations for optically immersed detector: › irradiance with CW or single pulse longer than 1 μs irradiance on the apparent...

Infrared detectors - Selected Line PVI-5-1×1-TO39-NW-36 2.4 – 5.5 µm HgCdTe ambient temperature, optically immersed photovoltaic detector PVI-5-1×1-TO39-NW-36 is uncooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in improved performance at high...

Infrared detectors - Selected Line Bottom view Immersion microlens shape Optical area AO, mm×mm Reverse bias (optional) Chassis ground Φ Φ– acceptance angle R – hyperhemisphere microlens radius A – distance from the bottom of hyperhemisphere microlens to the focal plane › Standard ohmmeter may overbias and damage the detector. Bias of 10 mV can be used for resistance measurements. › Operation in 10% to 80% humidity and -20°C to 30°C ambient temperature. › Beam power limitations for optically immersed detector: › irradiance with CW or single pulse longer than 1 μs irradiance on the apparent...

Infrared detectors - Selected Line 2.4 – 4.3 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector PVI-2TE-4-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 4 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in...

Infrared detectors - Selected Line Bottom view Immersion microlens shape Optical area AO, mm×mm Reverse bias (optional) Chassis ground Φ Φ– acceptance angle R – hyperhemisphere microlens radius A – distance from the bottom of the 2TE-TO8 header to the focal plane › Standard ohmmeter may overbias and damage the detector. Bias of 10 mV can be used for resistance measurements. › Heatsink with thermal resistance of ~2 K/W is necessary to dissipate heat generated by 2TE cooler. › Operation in 10% to 80% humidity and -20°C to 30°C ambient temperature. › Beam power limitations for optically...

Infrared detectors - Selected Line 2.9 – 5.5 µm HgCdTe two-stage thermoelectrically cooled, optically immersed photovoltaic detector PVI-2TE-5-1×1-TO8-wAl2O3-36 is two-stage thermoelectrically cooled IR photovoltaic detector based on sophisticated HgCdTe heterostructure for the best performance and stability. The device is optimized for the maximum performance at 5 µm. Detector element is monolithically integrated with hyperhemispherical GaAs microlens in order to improve performance of the device. Reverse bias may significantly increase response speed and dynamic range. It also results in...

Infrared detectors - Selected Line Bottom view Immersion microlens shape Optical area AO, mm×mm Reverse bias (optional) Chassis ground Φ Φ– acceptance angle R – hyperhemisphere microlens radius A – distance from the bottom of the 2TE-TO8 header to the focal plane › Standard ohmmeter may overbias and damage the detector. Bias of 10 mV can be used for resistance measurements. › Heatsink with thermal resistance of ~2 K/W is necessary to dissipate heat generated by 2TE cooler. › Operation in 10% to 80% humidity and -20°C to 30°C ambient temperature. › Beam power limitations for optically...