Veeco PROPEL Power GaN MOCVD System Single Wafer System to Enable Transition from R&D to Production of Highly-Efficient GaN Power Electronic Devices • Outstanding film uniformity, yield and device performance enabled by IsoFlange™ • TurboDisc® technology features long campaign runs for process development flexibility and best-in-class low particle performance • Fast cycles of learning accelerate GaN-on-Si R&D transition to high volume manufacturing Innovation. Performance. Brilliant.

Veeco's new Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six and eight-inch wafers, the Propel Power GaN MOCVD system deposits high-quality GaN films that result in the production of highly-efficient power electronic devices. The new IsoFlange and SymmHeat technologies, based on Veeco's leading TurboDisc technology, provides homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i and MaxBright systems...