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THNSNFxxxGCSS

THNSNFxxxGCSS
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WORLD S FIRST 19 NM NAND cSSD Up to 512GB of Storage Capacity 2.5-inch and mSATA Models 19 nm MLC NAND Flash Fast Access and Transfer Rates Advanced Power Management High-end and thin / light notebooks All-in-one desktop computers Consumer and industrial PCs Tablets Specifications THNSNFxxxGBSS Series Overview: Storage Capacity, Formatted NAND Technology Transfer Rate to Host Performance: Data Transfer Rate Max. Sequential Read Data Transfer Rate Max. Sequential Write Random 4KiB IOPS Read Random 4KiB IPOS Write MFTT Physical & Environmental Specifications Dimensions – mm: Width x Depth x Height Weight max

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Toshiba Electronics Europe GmbH Storage Products Division Hansaallee 181 40549 Düsseldorf Germany Tel: +49 (0) 211 5296-0 Fax: +49 (0) 211 5296-470 Your local contact Innovation is our tradition: Flash Memory and more nand Good Factory Award In 1984, Toshiba developed a new type of semiconductor memory called flash memory. In 1987, NAND flash memory was developed and became the internationally standardized memory device, leading the industry into the next generation. This award is presented to factories in Asia that show superior results in terms of improvement and innovation, commending...

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