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DTMOS
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DTMOS Latest Super-Junction Technology Toshiba has developed the Gen-4 super-junction 600V, 650V and 800V DTMOS IV MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOS IV provides a 30% reduction in Ron*A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOS III. A reduction in Ron*A leads to smaller RDSon chips in the same packages. This helps users to improve efficiency and reduce the size of power systems. Fast switching Xtype and fast body-diode 5-type versions are also available. Switched Mode Power Supply (SMPS) Lighting Power Factor Control (PFC) Industrial Applications (including UPS) 30% reduction in RDSon*A compared to previous generation Reduction of chip size at same performance or improved performance at same chip size Improved figure of merit (FOM) compared to DTMOS III generation Improved electrical efficiency by reduced switching and static losses 12% reduction in switching loss, EOSS, compared to the predecessor Application of latest process technology: single epitaxial process Lower increase in on-resistance at temperature rise Wide range of on-resistances and packaging options, see tables Freedom of choice and flexibility on package and on RDSon line-up 45% reduction of Qgd (gate drain charge) at X-Series High efficiency switching at PFC Attractive cost effects • Reduced heat system costs Less costs of field failure Less passive component costs Reduced BOM costs due to most effective solutions Smart performance increases • Easy design-in for faster time to market and product launch Ready to support high volume markets with competitive prices W-Series: Standard type W5-Series: With high speed body diode For bridge circuitry, like UPS or server SMPS X-Series: High speed type X5-Series: High speed type with high speed body diode For bridge circuitry, like UPS or server SMPS www.toshiba.semicon-storage.com www.toshiba.se

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> FAST REVERSE RECOVERY TIME The DTMOS IV option with fast body diode offers a fast recovery time even at high temperature. This results in lower power losses, less heat generation and lower power costs for a better and more thermally efficient design. (High speed diode) 15% LOWER RQSON AT MAXIMUM OPERATING For the single-epitaxial process the dependency of RDSon from temperature is much smaller compared to multi- epitaxial process. As DTMOS IV is manufactured with a single-epitaxial process, the RDSon value will be 15% smaller at operating temperature, resulting in lower power consumption...

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DTMOS IV 600V FAST DIODE TYPE “W5”-SERIES D-PAK DTMOS IV 600V HIGH SPEED TYPE (LOW Qgd) , FAST DIODE TYPE “X” & “X5”-SERIES DFN 8x8mm * Samples Available Copyright 2016 TOSHIBA Corporation. Product specifications are all subject to change without notice. Product design specifications and colours are subject to change without notice and may vary from those shown. Errors an

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DTMOS IV 650V HIGH SPEED TYPE (LOW Qgd) , FAST DIODE TYPE “W5” & “X5”-SERIES D2-PAK Copyright 2016 TOSHIBA Corporation. Product specifications are all subject to change without notice. Product design specifications and colours are subject to change without notice and may vary from those shown. Errors and omissions exc

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