Radio-Frequency Semiconductors
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Radio-Frequency Semiconductors - 1

TOSH 3A | Semiconductor Catalog Feb. 2015 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS

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Radio-Frequency Semiconductors Features low noise, low distortion and high ESD performance. Radio-Frequency MOSFETs Radio-Frequency Bipolar Transistors Radio-Frequency Diodes Available in small, thin packages for mobile communication applications. Available with a wide range of output power. Toshiba s Radio-Frequency Semiconductors CONTENTS Suitable for low-cost implementation of high-performance and high-quality radio-frequency (RF) front-end modules compliant with LTE and other access technologies.

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Recommended Products by Application H Mobile Phones jj^ms_ 800 MHz / 2 GHz: Devices for Detector Applications mm^JUT. LNA: Low Noise Amplifier n-y-<X>y^, ftStetlts BPF: Band Pass Filter /Ty LV'U^jbS' VCO: Voltage-Controlled Oscillator mmmmsSS, NF: Noise Figure StBJga GPS: Global Positioning System ±nmmiii-y7+.Th

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frfr Antenna Switch Modules (ASM) j-x^y^^^a-ju Switch Circuit of Dual Band ASM GPIO: General Purpose Input/Output HfflAtH* SP8T: Single Pole Eight Throw Switch 1 BK8 jfjSxi'v9= SP10T: Single Pole Ten Throw Switch 1 BKl0jf(Sxi'v9=

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50 to 900 MHZ: Terrestrial Receivers ±ffi±?£ffl 950 MHz to 2.15 GHz: Satellite Broadcasting Receivers vmm Semiconductor Part Number Package

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H Radio Systems (FRS/Walky-Talky) /WTVM 144 MHz / 430 MHz: Professional and Amateur Radios Mffimmm • T^J-ZLJ Power Amplifier Driver Amplifier Base Band Power Amplifier and Driver Amplifier (RF-Power MOSFETs) ny-Tyy/F^HitTyy (Knag/t^—MOSFET)

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Radio-Frequency MOSFETs Radio-Frequency Power MOSFETs Toshiba's RF-MOSFETs are ideal for RF power amplier applications. Features 1. Wide Lineup Available with output power up to 12 W and supply voltage from 3.6 V to 12.5 V for nal and driver amplier applications. 2. Maximum output load mismatch of 20:1 (all phase) Toshiba's RF-MOSFETs can be used as the nal amp. Product Lineup Antenna Output Power PO (W) Absolute Maximum Ratings Applications * New Product * Output Power Po (min) Part Number RFM08U9X UHF/VHF Professional Radios Amateur Radios Driver Amplier

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Product Selection Guide Antenna Output Power (Po) Recommended Products Radio-Frequency Small-Signal MOSFETs Product Lineup Absolute Maximum Ratings Part Number Electrical Characteristics

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Radio-Frequency Bipolar Transistors | Product Selection Guide g^-tzu^Eivfl'-rR Toshiba offers an extensive portfolio of radio-frequency bipolar transistors suitable for a wide range of applications. 1. Improves system performance, -fey r-cDiBliitHt^^l Toshiba's microwave transistors has high performance, such as low distortion, low NF and high ESD protection. Thus they are suitable for creating high-performance (s^> ffi£ts> BESDBMSia^efgrfiinri^fcs^ ntt^m 2. Facilitates system design. Mfg-^fW^ Since Toshiba's microwave transistors provide flexibility in circuit design according to system...

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Radio-Frequency Diodes ^ Variable Capacitance Diodes (VCD) grggre*r*- K_ A variable-capacitance diode (varicap diode) is a type of diode whose capacitance varies as a function of the reverse bias voltage (VR) applied across the anode and cathode terminals and is used as a voltage-controlled capacitor. Variable-capacitance diodes are commonly used in an RF matching circuit for electronic tuning applications such as tuners and voltage-controlled oscillators (VCOs). □Kgrn^V:*- K (yTU+l'^V-i'^-HO li.^y- t*\ftV- FfflizeamfZ&JUyxWE. (VR) (Dm.\z^mm\Wf^WS--9^^- ■ Comprehensive product lineup with...

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A PIN diode has an undoped intrinsic (I) semiconductor region between a p-type semiconductor and an n-type semiconductor region. Since the high-frequency series resistance (rs) is inversely proportional to the forward current (IF), a PIN diode acts as a variable-capacitance diode. PIN diodes are used for automatic gain control (AGC) as well as for the switching between transmit and receive modes of an RF signal. jiScDPNg^-i-^-KcD^pjic, ^mmimLLzimimi^mi$m (in) ^m^^nsmmmo^^-^s-o in^is^s OF) [z&vnmi&mimi (Q ^Mp-^src©, ^mv&o&otmftts&zz.tt^ztto smmmm(AGOmm, mmisumvm ■ Ultra-small, thin...

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^ Radio-Frequency Switching Diodes BiiB^yyi^-K A switching diode uses the rectification properties of a p-n junction. It is commonly used as an RF switch because its total capacitance (CT) is extremely low. Switching diodes are suitable for switching frequency bands ■ Available in various packages with single- and dual- • 1 iXy'r—'Jlz 1 R?3;rdi 2 W?-^MXViKBMts~}tyir—SJ diode configurations. ■ Band switches • ity KT.-fyg^ffl | Product Lineup m^-nm_

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^ Radio-Frequency Schottky Barrier Diodes y b*rt\)7?<(*- K Instead of a PN junction, a Schottky barrier diode has a metal-semiconductor junction that acts as a rectifier. The Schottky barrier diode is a majority carrier semiconductor device. The low forward voltage and the short reverse recovery time of the Schottky barrier diode make it suitable for RF detector and mixer applications. ■ Ultra-small, thin chip-scale package: SC2 (0.62 mm -^yy^-lMDmim-MMJ^y^-VS, SC2 (0.62 x 0.32 ■ Dual diodes that include two diodes in a single • 2i?5 1 Jtyir—=J\zMXViTc^^.y)\inn^-<yy-yy \ Applications ffliS_...

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RF switch ICs, which integrate analog, digital and RF circuits on the same chip, and are suitable for use as RF front-end antenna switches in smartphones. Toshiba's RF switch ICs are the ideal solution for RF front-end module applications compliant with LTE and LTE Advanced, which are being adopted worldwide. nauTc ic n\ X7- y$m~mw&z>uy vny ^myy^J-x^y ^icisuri/^-s-o LTE: Long Term Evolution Significantly reduces insertion loss by using Toshiba has developed a next-generation SOI process called TaRF6 by improving its original TarfSOl ™ (Toshiba advanced RF silicon-on-insulator) process. RF...

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Part Naming Convention • Radio-Frequency Bipolar Transistors (Microwave Transistors) © Toshiba microwave transistor © Number of terminals SffflS

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