Radio-Frequency Semiconductors
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Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng

1 1.1 Recommended Products by Application Cell Phones Devices for Detector Applications: 800 MHz/2 GHz BPF LNA MIX ANT Baseband VCO ANT SW Baseband Detector Applications Detector Driver Amp Part Number Discrete IC MIX BPF PA Package JDH2S02FS JDH3D01FV TCX4A01WBG fSC Feature Single Schottky barrier diode VESM Dual Schottky barrier diode WCSP4 – : New product LNAs with Bypass (Pass-Through) Circuit for Digital TV Receiver Applications: 470-860 MHz Switch ANT Mode Select Logic Signal (VM) LPF LNA 1-chip Tuner LSI Demodulator LSI LNA with Pass-Through Applications Part Number LNAs with...

1 Recommended Products by Application LNAs for GPS Receiver Applications: 1.575 GHz ANT BPF LNA BPF GPS Receiver IC Applications Discrete LNA MMIC Part Number Package Feature MT4S300T MT4S300U MT4S301T MT4S301U TA4032FT TA4032CTC TESQ Low NF (0.75 dB); low distortion (OIP3 = 8.7 dBm) @VCC = 1.8 V, ICC = 6.2 mA USQ TESQ USQ TESQ CST6C Low NF (0.76 dB)@VCC = 1.8 V, ICC = 5.2 mA Low NF (1 dB)@VCC = 3 V, ICC = 5 mA Small package : New product 4

1.2 TV Tuners 50-MHz to 900-MHz Terrestrial and 950-MHz to 2.15-GHz Satellite Broadcasting Receivers ANT Si Tuner IC LNA Demodulator LSI ANT LNA Applications Part Number LNA Terrestrial RF Satellite LNA Si Tuner IC AGC MT3S111 MT3S111TU MT3S111P MT3S113 MT3S113TU MT3S113P MT3S15TU MT3S19TU MT3S19 MT3S19R MT3S20TU MT3S20R MT3S20P MT3S21P MT3S22P 2SC5087 2SC5087R 3SK291 3SK292 3SK293 3SK294 MT4S03BU MT4S24U MT4S23U MT4S300U MT4S300T MT4S301U MT4S301T Demodulator LSI Package Feature S-Mini Ultra-low NF; low distortion UFM Ultra-low NF; low distortion PW-Mini Ultra-low NF; low distortion; high...

1 Recommended Products by Application 1.3 Low-Power Radios (FRS/GMRS) 470-MHz FRS/GMRS Radios and 144/430-MHz Professional and Amateur Radios LNA MIX BPF IF Amp BPF Baseband ANT MENU VCO ANT SW SW Driver Amp PA PA and Driver Amp (RF-MOSFET) LMR GMRS FRS GMRS FRS Driver Amp PA Application ANT_PO (W) VDS (V) 5.0 9.6 2SK3074 RFM08U9X RFM07U7X RFM12U7X 2SK3476 5.0-10.0 RFM01U7P 7.2 5.0 6.0 3.0 RFM04U6P 1.5-2.0 2SK3756 2SK3078A RFM03U3CT RFM04U6P 4.5 1.0 RFM00U7U 0.5 1.0-2.0 3.6 0.5 : New product LNA, MIX, VCO and Driver Amp (MMTR) VCEO (V) PW-Mini SOT-23F S-Mini UFM 12 MT3S20P MT3S20R 2SC5084...

1.4 Cordless Phones 900 MHz/1.9 GHz/2.4 GHz/5.8 GHz LNA BPF ANT MIX ANT 1 2 3 4 5 6 7 8 9 Baseband 0 VCO ANT SW 1 2 3 4 7 5 8 6 9 Baseband MIX BPF PA Applications Driver Amp Part Number Package JDP2S02AFS JDP3C13U MT4S301T MT4S301U MT4S301T MT4S301U MT4S300T MT4S300U 2SC5086 2SC5066 JDV2S41FS ANT SW PA Driver Amp, LNA VCO 0 Feature fSC Single USM Dual TESQ High gain; 5.8-GHz capability USQ TESQ High gain; low NF; 5.8-GHz capability USQ TESQ Low distortion; low NF USQ High current SSM Low current fSC Low resistance : New product 1.5 Antenna Switch Modules (ASM) 0.9-2 GHz ANT DPX PIN PIN /4...

2 Transistors 2.1 Microwave Transistors Toshiba offers an extensive portfolio of microwave transistors suitable for a wide range of applications. Features 1. Improves system performance. Toshiba's microwave transistors has high performance, such as low distortion, low NF and high ESD protection. Thus they are suitable for creating high-performance designs. 2. Facilitates system design. Since Toshiba's microwave transistors provide flexibility in circuit design according to system requirements, development time can be shortened. 3. Excellent cost performance Toshiba's microwave transistors...

Selection Guide Transistors for Low-Distortion and Low-Noise Amplifier Applications Applications: Terrestrial TV tuners, satellite TV tuners, CATV tuners, DAB systems, FM tuners, radios Process VCEO Supply Voltage Feature Recommended Products Si 12 V VCC = Up to 10 V Low distortion and high ESD protection 2SC5084 / 2SC5085 High gain and high ESD protection 2SC5087 / 2SC5087R Low distortion, high PD and high ESD protection MT3S20P Low distortion, high PD and high ESD protection MT3S20TU VCC = 5 V VCC = Up to 10 V High PD* MT3S20R VCC = 5 V Low distortion, high PD and high ESD protection...

2 Transistors 2.2 RF-MOSFET Toshiba's RF-MOSFETs are ideal for RF power amplifier applications. Features 1. Wide Lineup Available with output power up to 12 W and supply voltage from 3.6 V to 12.5 V for final and driver amplifier applications. 2. Maximum output load mismatch of 20:1 (all phase) Toshiba's RF-MOSFETs can be used as the final amp. RF-MOSFET Lineup 12 W RFM12U7X 3.6 to 4.5 V, 0.5 to 2 W For Two-Way Radios NEW RFM07U7X RFM08U9X 2SK3476 PO (W) 3W (6.3 x 6.1 mm2) 2SK4037 RFM03U3CT NEW RFM04U6P 2W RF-CST3 1W PW-X 2SK3075 7W (2.9 x 2.9 mm2) For 5-W Handy 2SK3079A RFM01U7P 2SK3078A...

Carrier Tape Specification for Diode Pairs Packing for Paired and Unpaired Diodes Tape TPH2 TPH3 Quantity Packing ESC USC Paired 6400 to 8000 2400 to 3000 Unpaired 8000 3000 Paired Diode Packing Using TPH2 Specification For paired diodes, packing is guaranteed as shown in Figure 1 and Table 1. Figure 1 Paired Diode Packing Specification Based on Capacitances Section where pairing is guaranteed Section where pairing is not guaranteed Same group Empty pockets Same group ( 60 diodes) Table 1 Pairing Specification Item Tape Section where pairing is guaranteed Any 15 consecutive diodes in the...

3 Diodes 3.2 PIN Diodes Features Ideal for RF switching applications. Available in the ultra-small SC2 package (0.62 x 0.32 mm) and in single and dual versions to meet customer needs for space-critical applications. Absolute Maximum Ratings Applications Selection Table VR IF Electrical Characteristics (Ta = 25˚C) VF Max rs Typ. CT Typ. IF VR f IF (pF) ( ) (mA) (V) (mA) (MHz) SC2 CST2 fSC (SOD-923) ESC (SOD-523) USC (SOD-323) 1SV308 (V) (mA) (V) USM (SOT-323, SC-70) 1SV307 S-FLAT TESQ 1.00 0.3 JDP2S02ACT JDP2S02AFS JDP4P02AT Standard 0.94 1.0 JDP2S08SC 30 50 0.95 0.21 1 50 10 100 JDP3C02AU...

3.3 Band-Switching Diodes Features Ideal for switching applications. Available in single and dual versions with total capacitance (CT) of less than 1.0 pF for RF applications. Selection Table Absolute Maximum Ratings Applications Electrical Characteristics (Ta = 25˚C) VF Max VR IF (V) (mA) Single (V) rs Typ. CT Typ. IF (mA) VR (V) (pF) 100 IF f (mA) (MHz) ( ) 0.7 USC (SOD-323) 1SS381 0.5-0.6 ESC (SOD-523) SSM USM S-Mini (SOT-416,SC-75) (SOT-323,SC-70) (SOT-346,SC-59) 1SS314 1SS364 30 Dual 3.4 0.85 2 6 50 0.80-0.85 1SS312 1SS268 1SS313 2 1SS269 100 0.6 Schottky Barrier Diodes (SBD) Features...