General Catalog (Diodes)
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August 2012 SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes ESD Protection Diodes Switching Diodes Schottky Barrier Diodes 1 2012/8 SCE0004M

Rectifiers General-Purpose Rectifiers Average Forward Current (A) 0.3 Peak Repetitive Reverse Voltage (V) 400 600 TPC6K01 HMG01 HMG02 CRG02 CRG07 ¡ CRG03 CRG04 CRG09 f CMG05 CMG06 CMG07 CMG08 CMG02 CMG03 Package VS-6 0.5 100 HM-FLAT 0.7 S-FLAT CRG01 S-FLAT 1 M-FLAT 2 M-FLAT Remarks 800 Independent 2-in-1 Independent 2-in-1 CRG05 ¡: The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101 f: High ESD immunity xx The products shown in bold are also manufactured in offshore fabs. xx Contact the Toshiba sales representative for information about RoHS...

Variable Capacitance Diodes Variable Capacitance Diodes (Diodes for Electronic Tuning) Part Number Package S-MINI 2.9 CT (pF) VR (V) CT (pF) VR (V) 15 28.5 to 32.5 3 11.7 to 13.7 8 Applications 2.5 1.5 VR (V) 1SV228 FM car radios, portable radios xx Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. Part Number Package USC ESC 1SV262 1SV322 1SV304 1SV270 1SV229 1SV310 1SV277 1SV239 fSC 2.0 1SV325 JDV2S36E 1SV282 1SV323 1SV305 1SV281 1SV279 1SV311 1SV314 1SV285 1SV280 VR (V) VR (V) 44 to 49.5 1 9.2 to 12.2 4 44 to 49.5 1 5.4 to...

(Standard Type, Bidirectional) Number of Diodes Single Type 0.8 1.2 0.6 0.6 Package (mm) Part Number DF2B6.8CT ESD Immunity (IEC 610004-2, Contact Discharge) Min 1.6 0.8 1.0 1.0 CT ESC fSC CST2 IR Max VBR (mm) DF2B6.8FS (V) @IR (mA) (mA) @VR (V) (pF) @VR (V) 6.8 (mm) DF2B6.8E 1 0.5 5 15 0 xx Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. (High-Speed Type) Number of Diodes Package 1.25 2.1 1.6 CT (pF) @lz @Vz Typ. DF5A3.6CJE DF5A5.6CJE DF5A6.2CJE DF5A6.8CJE ESD Immunity (IEC 610004-2, Contact Discharge) Min 2.0 (mm) Part...

ESD Protection Diodes (Super High-Speed Type) Number of Diodes Package 2 in 1 CST3 4 in 1 VESM USM ESV USV SMV 2.0 1.2 1.6 1.6 2.8 2.1 1.25 1.2 1.6 2.1 1.25 0.8 1.0 Package Dimensions and Internal Connections 1.2 0.6 2.0 2.9 Vz (V) CT (pF) ESD Immunity (IEC 610004-2, Contact @lz @Vz Discharge) Min Typ. (mA) Typ. (V) (mm) Part Number (mm) (mm) (mm) (mm) (mm) 5.6 — DF3A5.6LFV DF3A5.6LFU DF5A5.6LJE DF5A5.6LFU — 6.2 — DF3A6.2LFV DF3A6.2LFU DF5A6.2LJE DF5A6.2LFU — 6.8 DF3A6.8LCT * DF3A6.8LFV DF3A6.8LFU DF5A6.8LJE DF5A6.8LFU DF5A6.8LF 5 8.0 5 6.5 0 5 6 0 xx Contact the Toshiba sales...

(Extra High-Speed Type, Unidirectional) Number of Diodes Package 1-bit fSC 4-bit + VBUS protection 2-bit VESM CST6C IR (mA) VBR (V) UF6 CT (pF) 1.0 Part Number 1.0 1.5 0.8 1.2 0.8 @lR @VRWM @VR 0.6 Package Dimensions and Internal Connections 1.15 1.2 2.0 Min (mA) Max (mm) (mm) (mm) (mm) 6.0 5 0.5 DF2S6.8MFS * DF3D6.8MFV * DF6F6.8MCTC * DF6F6.8MTU * t = 0.48 (V) Max (V) 5.0 0.9(1.0) 0 ESD Immunity (IEC 610004-2, Contact Discharge) Min xx Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components. ±8 kV *: New product The internal...

(mm) (mm) SMV (SC-74A) ES6 2.9 US6 (mm) 2.0 1.6 (mm) (mm) SM6 (SC-74) 2.9 Remarks 2.8 1.6 1.6 1.2 (mm) 2.0 2.1 1.25 USV 1.6 1.6 1.2 ESV 2.9 2.8 1.6 SMQ (SC-61) 2.9 1.5 2.1 1.25 2.0 2.1 1.25 USQ (mm) (mm) Low leakage current, Single Low leakage current, Series-connected HN4D01JU 1SS308 HN1D01FE HN1D01FU HN1D01F High-speed switching, Common anode HN4D02JU 1SS309 HN1D02FE HN1D02FU HN1D02F High-speed switching, Common cathode HN1D04FU High-speed switching, Series-connected 1SS382 1SS272 HN2D01JE (HN2D01FU) (HN2D01F) High-speed switching, Independent diodes (HN2D02FU) High-speed switching,...

(mm) ES6 US6 (mm) SM6 (SC-74) 2.0 1.6 2.9 (mm) Remarks 2.8 1.6 2.9 1.6 1.2 2.1 1.25 2.5 1.5 2.9 (mm) 1SS321 SMQ (SC-61) 2.0 2.1 1.25 USQ 2.9 1.5 S-MINI (SC-59) (mm) (mm) Low leakage current, Common cathode 1SS394 1SS384 1SS391 HN2S01FU HN2S05FU HN2S01F Low VF, Independent diodes 1SS377 Low VF, Common cathode 1SS374 Low VF, Series-connected 1SS402 HN2S03FE HN2S03FU Low leakage current, High-speed SW Low IR HN2S04FU Low VF, High current The internal connection diagrams only show the general configurations of the circuits. 14 2012/8 SCE0004M

(mm) USQ SMQ (SC-61) 2.0 2.9 2.1 1.25 2.9 1.2 1.2 0.9 1.6 0.8 TESQ (mm) (mm) Remarks 2.9 1.5 2.0 1.6 (mm) 1SS422 S-MINI (SC-59) 2.1 1.25 USM (SC-70) 2.5 1.5 SSM (mm) (mm) Low VF Low VF Low IR Low IR Low VF Low VF High current, Single Improved VF and IR High current, Single Improved VF and IR 1SS322 1SS294 1SS383 1SS319 Standard, Independent diodes 1SS393 1SS392 Standard, Common cathode (1SS423) 1SS396 Standard, Series-connected 1SS348 High current, Single *: New product The internal connection diagrams only show the general configurations of the circuits. 16 2012/8 SCE0004M

Small-Signal Schottky Barrier Diodes and Multiple Schottky Barrier Diodes (Continued) IO (mA) Typ. Max ESV UFV US6 2.0 2.0 2.1 1.7 1.6 @IF (mA) (mm) Remarks 2.1 1.25 VR (V) Electrical Characteristics (Ta = 25°C) VF(V) 1.6 1.2 Absolute Maximum Ratings (mm) (mm) 30 100 0.38 0.5 100 Low VF 30 100 0.41 0.5 100 Low VF 30 100 0.51 0.62 100 Low IR 30 200 0.52 0.6 200 Low IR 30 200 0.44 0.5 200 Low VF 30 500 0.40 0.45 500 Low VF 30 700 0.40 0.45 700 High current, Single Improved VF and IR 30 800 0.40 0.45 800 High current, Single Improved VF and IR 30 1000 0.47 0.57 1000 40 100 0.54 (0.56) 0.6...

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