V400ACE Focused Ion Beam
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Product Data V400ACE™ Focused Ion Beam High performance circuit edit and design debug solution The V400ACE™ Focused Ion Beam (FIB) system incorporates the latest developments in ion column design, gas delivery and end point detection to provide fast, efficient, cost-effective editing on advanced integrated circuits. Circuit editing allows product designers to reroute conductive pathways and test the modified circuits in hours, rather than the weeks or months that would be required to generate new masks and process new wafers. Fewer, shorter modification and test cycles allow manufacturers to ramp new processes to profit­ able high volume yields faster, and be first to market with premium priced new products. The V400ACE is specifically designed to meet the challenges of advanced designs and processes: smaller geometries, higher circuit densities, exotic materials and complex inter­ connect structures. The V400ACE can be configured for backside editing with an optional IR microscope and bulk silicon trenching package. Tomahawk™ Ion Column FEI’s Tomahawk™ Ion Column delivers unrivalled capability and flexibility with seamless operation from 30 kV to 2 kV. High current density milling at 30 kV ensures rapid material • Fast, precise circuit modifications allow design changes in hours without processing new silicon • NanoChemix gas delivery system provides improved speed, flexibility, uniformity, and quality in material removal and deposition • Tomahawk ion column delivers more current to a smaller spot for faster, more precise milling • Simultaneous plots of SE and specimen current improve end point detection • Fast, accurate cross sectioning reveals defects and subsurface features • Electrical feedthroughs for probing and chip testing applications • Optional backside editing capability with near infrared microscope and Si trenching package removal and increased throughput, while low kV opera­ ion is useful for selective etching of t copper. NanoChemix™ Gas Delivery FIB circuit editing tools use controlled amounts of specific gases, injected near the beam at the sample surface, to enhance the speed and selectivity of the milling process, and to deposit conductive and insulating materials in precisely controlled patterns. The V400ACE’s innovative NanoChemix™ gas delivery system increases editing flexibility with variable pressure control and a wide variety of solid, liquid or gas precursor materials. Its unique tri-nozzle design ensures a symmetric, high-flux flow of agents. A dedicated central nozzle delivers precursor for metal depo­ itions. Dual opposing nozzles deliver etch gases and s elimi­ ate the shadowing that occurs in trenches milled using single-nozzle systems. Gas n mixtures are used to improve electrical performance of insulator depositions. Automated purge routines and controlled gas volumes provide fast, easy switching between gases and shorten pump down times. Integrated toxic gas monitors and complete compli­ nce with a SEMI S2 standards ensure operator safety.

Product Data V400ACE™ Focused Ion Beam Figure 1: View of circuitry through the backside silicon using integrated IR microscope showing resolution <0.5 µm Figure 2: High aspect ratio via formed through oxide and endpointed on copper metal line using V400ACE’s improved ion optics. Minimum dimension here is 50 nm. Backside Edit Option Enhanced Navigation and Automation A near infrared microscope permits imaging of target struc­ ures t through front side dielectric and backside bulk silicon for fast, accurate navigation. Devices with backside silicon up to full thickness can be imaged allowing...