ETNA
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Catalog excerpts

> ETNA HP Diode-Pumped Compact Series FEATURES • 4 to 40 kHz operation • 170 W at 532 nm • 220 W at 1064 nm • Outstanding stability • M2 between 15 and 40 (on request) • Compatible with industrial environment APPLICATIONS • Femtosecond amplifier pumping • Industrial material processing • ITO ablation, Si annealing • Instrumentation • Scientific pump source for non-linear optics Typical Etna HP beam profile at 532 nm The world reference for high average power Nd:YAG laser Delivering more than 170 W of green power at 10 kHz, the ETNA HP has been developed to answer the most demanding industrial and scientific applications. ETNA HP is based on THALES latest developments in diode pumping heads renowned for their outstanding power stability. Its unique specifications in terms of average power, beam quality and stability make the ETNA HP the world reference for pumping high repetition rate Ti:Sa amplifiers. Thanks to its outstanding stability, high specifications flexibility and its maintenance free operation, the ETNA HP works already successfully in industrial environment for ITO ablation and Si annealing processes.

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ETNA HP Diode-Pumped Compact Series Specifications (at 10 kHz) Version Wavelength (nm) Repetition rate (1) Energy per pulse (mJ) Average power (W) (2) Typical pulse width (ns) Pulse to pulse energy stability (% rms) Typical M2 +/- 30 ~ 3.2 Multi-mode Gaussian Unpolarized +/- 30 ~ 2.1 Multi-mode Gaussian Vertical +/- 30 ~ 2.7 Multi-mode Gaussian Vertical Beam pointing stability (µrad) Typical Beam size (mm) at waist position Beam profile Polarization (1) Factory preset at one repetition rate (2) Other average power available on request Long term stability measurement (typical) Options(NEW)...

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