TESCAN S9000X

Product catalog summary

Overview: The TESCAN S9000X is a high-performance FIB-SEM system designed for advanced physical failure analysis and material characterization, especially in semiconductor applications. It offers high resolution and throughput for large-scale sample preparation and characterization.

Key Features:

Resolution and Throughput: Provides a resolution of 1.0 nm and features a Xenon Plasma FIB for high-throughput milling.
Versatility: Supports a wide range of applications from bulk material removal to precise nanofabrication.
Detection System: Includes a multi-detector system for comprehensive sample analysis, including SE and BSE detection.
Surface Sensitivity: Enhanced through selective electron-signal detection and beam deceleration technology.
3D Microanalysis: Offers ultra-fast 3D microanalysis with simultaneous EDS and EBSD data acquisition.
Software Platform: TESCAN Essence™ software provides a user-friendly interface with customizable modules.

Applications:

Physical Failure Analysis: Suitable for analyzing complex semiconductor and optoelectronic devices, and nanomaterials.
Large-Scale Cross-Sectioning: Capable of cross-sectioning large structures like TSVs, MEMS, and solder bumps.
3D Tomography: Enables large-volume 3D sample reconstructions for detailed internal structure analysis.

Technical Specifications:

Electron Optics: Features a high brightness Schottky emitter and Triglav™ column with TriLens™ objective.
Resolution: Offers resolutions of 0.7 nm at 15 keV and 1.4 nm at 1 keV in standard mode.

Benefits:

High ion beam currents for fast milling without quality compromise.
Reduced surface amorphization and ion implantation.
Enhanced detection limits in TOF-SIMS analysis.
Increased throughput and productivity in semiconductor workflows.

Specifications:
1. STEM Resolution: 0.6 nm at 30 keV.
2. Maximum Field of View: 4.3 mm at WDAnalytical 5 mm, 7.0 mm at WD 30 mm.
3. Electron Beam Energy: 200 eV to 30 keV, down to 50 eV with BDT option.
4. Probe Current: 2 pA to 400 nA.

Ion Optics:
1. Ion Column: iFIB+™ / High-resolution iFIB+™ (option).
2. Ion Gun: ECR-generated Xe ion Plasma FIB.
3. Ion Beam Energy: 3 keV to 30 keV.
4. Probe Current: 1 pA to 2 µA / 1 pA to 1 µA.
5. Resolution: < 25 nm at 30 keV / < 15 nm at 30 keV (at SEM-FIB coincidence point).
6. Magnification: Minimum 150× at coincidence point and 30 keV, maximum 1,000,000×.
7. SEM-FIB Coincidence: WD 5 mm for SEM - WD 12 mm for FIB.
8. SEM-FIB Angle: 55°.

Detectors:
1. Standard Detectors: SE, In-Beam SE.
2. TriBE™ Detection System: For angle-selective BSE signal collection with energy-filtering detection capabilities.
- In-Beam f-BSE: Annular, scintillator-based axial BSE detector.
- Mid-Angle BSE: Second in-column detector for mid-angle electrons.
- Retractable BSE: Retractable annular in-chamber scintillator-based detector.

Optional Analytical Techniques: 4Q BSE, HADF R-STEM, EDS, WDS, EBSD, TOF-SIMS, SITD, CL, EBIC, Raman Spectroscopy (RISE).

Accessories:
1. Standard: Decontaminator/plasma cleaner.
2. Optional: Load Lock, Infrared Microscope, Nanomanipulators, Flood Gun, Rocking Stage, Optical Stage Navigation, Control Panel, Beam blanker for SEM column.

Gas Injection System: Single nozzle OptiGIS™ and in-line multi-nozzle 5-GIS with a variety of gas chemistries.

Chamber:
1. Internal Dimensions: 340 mm (width) × 315 mm (depth) × 320 mm (height).
2. Number of Ports: 20+.
3. Chamber and Column Suspension: Active vibration isolation (integrated).

Specimen Stage:
1. Type: Compucentric, fully motorised.
2. Movement: XY = 130 mm (–65 mm to +65 mm), Z = 90 mm.
3. Rotation: 360° continuous.
4. Tilt: –60° to +90°.

Note: With the Beam Deceleration Technology option (BDT), and SE(BDM) detector.

Disclaimer: TESCAN ORSAY HOLDING reserves the right to change the document without notice. 2018.07.27.

Catalog excerpts

TrigLav™ UHRSEM Low-kV ResoLution Signal-Selective Detection

Open the catalog to page 1

Ultimate resolution and maximum throughput in large-scale sample preparation and characterisation TESCAN S9000X is the platform for the most challenging physical failure analysis applications in semiconductors and material characterisation that require ultimate precision and extremely high-throughput. The TESCAN S9000X guarantees ultimate resolution and surface sensitivity essential to resolve nanosized structures, provides best conditions for large-volume 3D sample characterisations, and at the same time, it delivers unmatched FIB capabilities that enable precise, damage-free, and extremely...

Open the catalog to page 2

ĬĬ Fast microanalysis without sacrificing spatial resolution. The Triglav™ SEM column features a new Schottky FE gun that enables beam currents up to 400 nA and rapid beam energy changes. Real-time In-Flight Beam Tracing™ for performance and beam optimisation includes direct and continual control of beam spot size and beam currents guarantees best conditions for microanalysis. ĬĬ Large wafer analysis Thanks to optimal 60° objective geometry design and a large chamber that allows both SEM and FIB analysis of 6” and 8” wafers at any location. ĬĬ Complex applications easier than ever New TESCAN...

Open the catalog to page 3

TESCAN Xe Plasma FIB: combining power and precision in one single instrument Xe plasma FIB has positioned as a powerful microanalytical technique that has completely changed the landscape and scope of FIB applications in science but also and mainly industry. What makes Xe plasma special is that it is possible to achieve very high ion beam currents up to 2 µA without compromising beam quality, a feature which makes the TESCAN S9000X a suitable technique for large-volume milling tasks and the ideal choice to increase throughput and productivity in routine workflows in fabs and semiconductor foundries....

Open the catalog to page 4

Applications Root-cause physical failure analysis of today’s semiconductors devices has become an extremely complex task that needs to deal with ever smaller devices with higher density and functionality. This requires of highly-reliable analytical platforms that can keep up with the increasing complexity of design and architectures of integrated circuits, optoelectronic devices and in general, with the development of new nanotechnologies and nanomaterials. The TESCAN S9000X is a powerful FIB-SEM platform specifically designed to take up such challenges. The ultimate resolution, surface sensitivity...

Open the catalog to page 5

Electron optics: *With the Beam Deceleration Technology option (BDT), and SE(BDM) detector TESCAN ORSAY HOLDING reserves the right to change the document without notice. 2018.07.27

Open the catalog to page 6

All Tescan GmbH catalogs and technical brochures

LYRA3
12 Pages
VEGA3
6 Pages
MAIA3
12 Pages
TESCAN S8000
6 Pages