Overview: This document provides technical specifications and details for the Osiris® series of photo-electric sensors, focusing on their application, assembly, and characteristics. These sensors are designed with a metal case, cylindrical shape, and threaded M8 x 1, suitable for d.c. supply with solid-state output.
Specifications:- Design: Available in thru-beam and diffuse systems, using infrared transmission.
- Sensing Distance: Nominal sensing distance is 2 m for thru-beam and 0.05 m for diffuse systems.
- References: Various models are available with PNP and NPN functions, both NO and NC.
- Weight: Ranges from 0.015 kg to 0.050 kg depending on the model.
Characteristics:- Certifications: CULUS certified.
- Temperature Range: Operational from -25 to +55 °C and storage from -30 to +70 °C.
- Resistance: Vibration resistance up to 7 gn and shock resistance up to 30 gn.
- Protection: IP 65 to IP 67 depending on the model.
- Materials: Nickel plated brass case, PMMA lenses.
- Electrical: Rated supply voltage of 12-24 VDC, with protection against reverse polarity.
- Switching Capacity: 100 mA with overload and short-circuit protection.
Performance:- Switching Frequency: Up to 2000 Hz for thru-beam and 1000 Hz for diffuse systems.
- Delays: First-up delay of 20 ms, response and recovery times of 0.25 ms and 0.5 ms respectively.
Functionality:- Output State: Indicated by a yellow LED, illuminated when sensor output is ON.
Curves and Dimensions:- Detection Curves: Provided for both thru-beam and diffuse systems, with excess gain curves at ambient temperature.
- Dimensions: Detailed dimensions for models with M8 connectors.
Wiring Schemes: Includes wiring diagrams for 3-wire systems, detailing connections for transmitters and receivers.
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