PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Load Switch Ordering Information Part No. N-Channel MOSFET Note: “G” denotes Halogen Free Product. Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Ta = 25 C Maximum Power Dissipation Operating Junction and Storage Temperature Range Operating Junction Temperature Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature 2 b. Surface Mounted on a 1 in pad of 2oz Cu, t ≤ 5 sec.

TSM05N03 30V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID...

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