TAIWAN SEMICONDUCTOR ABSOLUTE MAXIMUM RATINGS (TA THERMAL PERFORMANCE Thermal Performance Note: Rgja is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined at the solder mounting surface of the drain pins. Rgja is guaranteed by design while Rgca is determined by the user's board design.

TAIWAN SEMICONDUCTOR TSM015NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) 1. Silicon limited current only. 3. Pulse test: Pulse Width < 300gs, duty cycle < 2%. 4. Switching time is essentially independent of operating temperature.

TSM015NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Output Characteristics VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=4V VGS=3.5V On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge 10 VGS, Gate to Source Voltage (V) RDS(ON), Drain-Source On-Resistance (Ω) VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) On-Resistance vs. Junction Temperature RDS(on), Drain-Source On-Resistance (Ω) On-Resistance vs. Gate-Source Voltage RDS(on), Drain-Source On-Resistance (Normalized) VGS, Gate to Source Voltage (V)

TSM015NA03CR Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) BVDSS vs. Junction Temperature Capacitance vs. Drain-Source Voltage BVDSS (Normalized) Drain-Source Breakdown Voltage VDS, Drain to Source Voltage (V) Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage IS, Reverse Drain Current (A) VSD, Body Diode Forward Voltage (V) VDS, Drain to Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance, ZӨJC Notes: Duty = t1 / t2 TJ = TC + PDM x ZӨJC x RӨJC t,...

TAIWAN SEMICONDUCTOR TSM015NA03CR Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters) SUGGESTED PAD LAYOUT (Unit: Millimeters) MARKING DIAGRAM = Halogen Free = Year Code = Week Code (01~52) = Factory Code

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