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TSG10N120CN Discrete Devices-IGBT-IGBT
1 /7Pages

TSG10N120CN Discrete Devices-IGBT-IGBT

TSG10N120CN Discrete Devices-IGBT-IGBT
1 /7Pages

Catalog excerpts

TSG10N120CN Discrete Devices-IGBT-IGBT-1

TSG10N120CN N-Channel IGBT with FRD. TO-3P Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES (V) General Description The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Block Diagram High Speed Switching Ordering Information Part No. TSG10N120CN C0G TO-3P 30pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Diode Forward Current (TC=100℃) Diode Pulse Forward Current Continuous Current Pulsed Collector Current * Operating Junction Temperature Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature

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TSG10N120CN Discrete Devices-IGBT-IGBT-2

TSG10N120CN N-Channel IGBT with FRD. Thermal Performance Parameter Symbol IGBT Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Electrical Specifications (Tc=25oC unless otherwise noted) Parameter Static Collector-Emitter Leakage Current Gate-to-Emitter Leakage Current Gate Threshold Voltage Collector-Emitter Saturation Voltage Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector...

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TSG10N120CN Discrete Devices-IGBT-IGBT-3

VCE - CoIIectoi-to-Emitter Voltage(V) VCE - Co II ector-to-Emitter Voltage(V)

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TSG10N120CN Discrete Devices-IGBT-IGBT-4

TSG10N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Gate charge characteristics Forward Characteristic of Diode

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TSG10N120CN Discrete Devices-IGBT-IGBT-5

TSG10N120CN N-Channel IGBT with FRD. Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Normalized Thermal Transient Impedance, Junction-to-Ambient

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TSG10N120CN Discrete Devices-IGBT-IGBT-6

TSG10N120CN N-Channel IGBT with FRD. Unit: Millimeters

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TSG10N120CN Discrete Devices-IGBT-IGBT-7

TSG10N120CN N-Channel IGBT with FRD. Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC...

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