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High Voltage NPN Transistor

High Voltage NPN Transistor

Product catalog summary

Product Overview: The TS13005 is a high voltage NPN transistor available in TO-220 and ITO-220 packages. It features a collector-emitter voltage (BVCEO) of 400V, a collector-base voltage (BVCBO) of 700V, and a collector current (IC) of 4A. The transistor is designed for high-speed switching applications.

Features: The TS13005 is characterized by its high voltage and high-speed switching capabilities. It is constructed using a silicon triple diffused type and is an NPN silicon transistor.

Ordering Information: The transistor is available in two package types: TS13005CZ C0 (TO-220) and TS13005CI C0 (ITO-220), each packed in tubes of 50 pieces.

Absolute Maximum Ratings: The maximum ratings include a collector-base voltage of 700V, a collector-emitter voltage of 400V, and an emitter-base voltage of 9V. The collector current is rated at 4A DC and 8A pulse, with a base current of 2A DC and 4A pulse. The total power dissipation is 75W for TO-220 and 30W for ITO-220, with an operating junction temperature range of -55 to +150°C.

Electrical Specifications: The transistor exhibits a collector cutoff current of up to 250uA at VCE = 400V and a collector-emitter saturation voltage of up to 1V at IC = 4A, IB = 1A. The DC current gain ranges from 8 to 40 depending on the collector current.

Mechanical Drawings: Detailed mechanical dimensions are provided for both TO-220 and ITO-220 packages, including marking diagrams for identification.

Notice: Specifications are subject to change without notice. The document disclaims any liability for errors and specifies that the products are not intended for use in medical or life-sustaining applications.

High Voltage NPN Transistor

High Voltage NPN Transistor

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