ES1A thru ES1J Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Super fast recovery time for high efficiency - Built-in strain rellef - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - Green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage (Note 1) @1A Maximum reverse current @ rated VR Typical thermal resistance Operating junction temperature range Storage temperature range Typical junction capacitance (Note 3) Maximum reverse recovery time (Note 2) RθJL RθJA Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied VR=4.0 Volts

ES1A thru ES1J Taiwan Semiconductor ORDERING INFORMATION PART NO. GREEN COMPOUND Note 1: "x" defines voltage from 50V (ES1A) to 600V (ES1J) EXAMPLE PREFERRED P/N PART NO. GREEN COMPOUND PACKING CODE Green compound RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 1 0.8 0.6 0.4 RESISTER OR INDUCTIVE LOAD INSTANTANEOUS FORWARD CURRENT (A) 8.3mS Single Half Sine Wave (JEDEC Method) FIG. 4 TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT...

Taiwan Semiconductor FIG. 5 TYPICAL JUNCTION CAPACITANCE P/N = Specific Device Code

ES1A thru ES1J Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or...