1. Catalogs
  2. Taiwan Semiconductor
  3. BYG20D Discrete Devices -Diode-High Efficienct Recovery

BYG20D Discrete Devices -Diode-High Efficienct Recovery
1 /4Pages

BYG20D Discrete Devices -Diode-High Efficienct Recovery

BYG20D Discrete Devices -Diode-High Efficienct Recovery
1 /4Pages

Catalog excerpts

BYG20D Discrete Devices -Diode-High Efficienct Recovery-1

1.5 AMPS High Efficient Surface Mount Rectifiers SMA/DO-214AC Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260℃/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.064 grams Ordering Information (example) Part No. Packing code Packing code (Green) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) Maximum Reverse Current @ Rated VR Pulse energy in avalanche mode, non repetitive (Inductive load switch off ) TA=25℃, L=120mH Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

 Open the catalog to page 1
BYG20D Discrete Devices -Diode-High Efficienct Recovery-2

RATINGS AND CHARACTERISTIC CURVES (BYG20D THRU BYG20J) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM NOTES: 1. Rise Time=7ns max. Input lmpedance= 2. Rise Time=10ns max. Sourse Impedance^

 Open the catalog to page 2
BYG20D Discrete Devices -Diode-High Efficienct Recovery-3

Ordering information Part No. Folded SMA 7.5K / 13" Plastic REEL C SMA Packing code Packing code (Green) Note: "x" is Device Code from "D" thru "J". Tape & Reel specification Reel Size Tape Size 7" Reel Size Tape Size 13"

 Open the catalog to page 3
BYG20D Discrete Devices -Diode-High Efficienct Recovery-4

Package Outline Dimensions DIM. Date Code Green Compound Specific Device Code Marking Diagram

 Open the catalog to page 4

All Taiwan Semiconductor catalogs and technical brochures

  1. TS1117BCW50

    7  Pages

  2. TS1117BCW33

    7  Pages

  3. TS2937CM33

    10  Pages

  4. TS1935BCX5

    8  Pages

  5. TS2581CS

    7  Pages

  6. TS2596CM5

    8  Pages

  7. TS2596CM533

    8  Pages

  8. TS2596CM550

    8  Pages

  9. TS1431BCX

    10  Pages

  10. TS431ACX-Z

    10  Pages

  11. TS431ARCX-Z

    10  Pages

  12. TS431ARIX-Z

    7  Pages

  13. TS431BCX-Z

    10  Pages

  14. TS431BRIX-Z

    7  Pages

  15. TS432ACT

    12  Pages

  16. TSH181CT

    7  Pages

  17. TSH188CT

    8  Pages

  18. TSH188CX

    8  Pages

  19. TSH190CT

    8  Pages

  20. TSH190CX

    8  Pages

  21. TS19320CS

    9  Pages

  22. MCR100-3

    5  Pages

  23. 1.5KE

    6  Pages

  24. ABS2

    4  Pages

  25. ES1G

    4  Pages

  26. ES1FL

    4  Pages

  27. ES1DL

    4  Pages

  28. ES1CL

    4  Pages

  29. ES1BL

    4  Pages

  30. ES1AL

    4  Pages

  31. ES0406D1

    3  Pages

*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.