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STGW30NC60KD

STGW30NC60KD
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STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with ultra fast free-wheeling diode 2 1 High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Device summary Order code

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Electrical characteristics (curves) Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Collector current (continuous) at TC = 25 °C Collector current (continuous) at TC = 100 °C Turn-off latching current Pulsed collector current Gate-emitter voltage Diode RMS forward current at TC = 25 °C Surge non repetitive forward current tp = 10 ms sinusoidal Short circuit withstand time, VCE = 0.5 V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V Thermal resistance junction-case IGBT max. Thermal resistance junction-case diode max. Thermal resistance junction-ambient max Operating junction temperature Calculated...

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Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol Static Parameter Test conditions Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) Collector-emitter saturation voltage Collector cut-off current (VGE = 0) Gate threshold voltage Gate-emitter cut-off current (VCE = 0) Forward transconductance 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Cies Coes

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Electrical characteristics Switching on/off (inductive load) Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions Switching energy (inductive load) Parameter Test conditions Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses 1. Turn-off losses include also the tail of the coll

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Electrical characteristics Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current

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Electrical characteristics Electrical characteristics (curves) Output characteristics Transfer characteristics Collector-emitter on voltage vs temperature Gate charge vs gate-source voltage Figure 7. Capacitance variations

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Electrical characteristics Figure 8. Normalized gate threshold voltage vs temperature Collector-emitter on voltage vs collector current Figure 10. Normalized breakdown voltage vs temperature Figure 11. Switching losses vs temperature Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current

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Electrical characteristics Figure 14. Thermal Impedance Figure 16. Forward voltage drop versus forward current IFM(A) 120 110

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Test circuit Test circuit Figure 17. Test circuit for inductive load switching Figure 18. Gate charge test circuit Figure 19. Switching waveforms Figure 20. Diode recovery times waveform

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Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com

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Package mechanical data

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Revision history Revision history Table 9. Document revision history Initial release Updated Figure 15: Turn-off SOA

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Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use...

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