M40SZ100W

M40SZ100W
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M40SZ100W

Product catalog summary
Overview: The M40SZ100W is a 3V NVRAM supervisor that transforms low-power SRAMs into non-volatile memory. It includes features such as precision power monitoring, automatic write-protection, and a reset output for power-on reset, operating within a supply voltage range of 2.7 to 3.6 V. It also has a battery low pin for monitoring battery status.
Features:
  • Converts low-power SRAMs into NVRAMs.
  • Operates at 3V with precision power monitoring and switching circuitry.
  • Automatic write-protection when VCC is out-of-tolerance.
  • Reset output for power-on reset and a 1.25 V reference for PFI/PFO.
  • Less than 15 ns chip enable access propagation delay.
  • RoHS compliant with lead-free interconnect.
Device Operation: The M40SZ100W monitors VCC for out-of-tolerance conditions and switches SRAM from VCC to an external battery during power failure to retain data. The SRAM is write-protected until VCC returns to a valid level. It includes a power-fail input/output for undervoltage detection.
Data Retention: Data retention is guaranteed down to VCC = 2.0 V. The total current requirements for data retention are the sum of the SRAM's data retention current and the M40SZ100W's ICCDR value.
Power-on Reset: The reset output ensures the microprocessor starts in a known state, remaining low until VCC stabilizes above VPFD, with a delay for power supply stabilization.
Battery Monitoring: Battery voltage monitoring occurs upon power-up and at intervals of at least 24 hours. The battery low pin indicates when the battery voltage is below 2.5 V, suggesting the need for replacement to ensure data integrity.
Power-fail Input/Output: The power-fail input is compared to an internal reference voltage. If below the threshold, the power-fail output signals a failing power supply. During battery backup, the power-fail comparator is disabled.
Technical Specifications: Detailed tables and figures illustrate signal names, power-down/up AC characteristics, reset AC characteristics, maximum ratings, DC and AC parameters, and package mechanical data.
VCC Noise and Transients: To mitigate voltage fluctuations and spikes caused by ICC transients on the VCC bus, a 0.1 μF ceramic bypass capacitor is recommended. A Schottky diode should be connected from VCC to VSS to protect against negative voltage spikes during power cycling.
Maximum Ratings: Exceeding the absolute maximum ratings can cause permanent damage. Key parameters include storage temperature (-55 to 125 °C), input/output voltages (-0.3 to VCC +0.3 V), and supply voltage (-0.3 to 4.6 V).
DC and AC Parameters: Operating and measurement conditions include a supply voltage range of 2.7 to 3.6 V and an ambient operating temperature of -40 to 85 °C. DC characteristics include supply current, data retention mode current, and input/output leakage currents.
Package Mechanical Data: ECOPACK® package options for environmental compliance are described, with dimensions and specifications for the SO16 package.
Part Numbering: The ordering information scheme details the device type, supply voltage, package, temperature range, and shipping method.
Revision History: The document includes a revision history, noting changes and updates from the first issue in December 2001 to the latest revision in December 2013.
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Catalog excerpts

M40SZ100W-1

M40SZ100W3 V NVRAM supervisor for LPSRAM Datasheet - production data Features • Convert low power SRAMs into NVRAMs • 3 V operating voltage • Precision power monitoring and power switching circuitry • Automatic write-protection when VCC is out-oftolerance • Choice of supply voltage and power-fail deselect voltage: - VCC = 2.7 to 3.6 V; 2.55 V < VPFD < 2.70 V • Reset output (RST) for power on reset • 1.25 V reference (for PFI/PFO) • Less than 15 ns chip enable access propagation delay • Battery low pin (BL) • RoHS compliant - Lead-free second level interconnect Description The M40SZ100W NVRAM controller is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition. When an invalid VCC condition occurs, the conditioned chip enable output (ECON) is forced inactive to write protect the stored data in the SRAM. During a power failure, the SRAM is switched from the VCC pin to the external battery to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write-protected until a valid power condition returns. This is information on a product in full production. www.stcom

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M40SZ100W-2

Data retention lifetime calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Power-on reset output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Reset input (RSTIN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

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M40SZ100W-3

List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Power-down/up AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reset AC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....

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M40SZ100W-4

List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Hardware hookup . . . . . . . . . . . . . . . . . . . . . . . . ....

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M40SZ100W-5

Table 1. Signal names

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M40SZ100W-6

Device overview M40SZ100W Figure 2. Pin connections NC NC RST NC RSTIN PFO VBAT VSS Figure 3. Block diagram VOUT 1. Open drain output

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M40SZ100W-7

Device overview Figure 4. Hardware hookup 3.0V, 3.3V Regulator Unregulated Voltage M40SZ100W 0.1μF E From Microprocessor RSTIN To Battery Monitor Circuit

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M40SZ100W-8

Operation The M40SZ100W, as shown in Figure 4 on page 7, can control one (two, if placed in parallel) standard low-power SRAM. This SRAM must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are not. During normal operating conditions, the conditioned chip enable (ECON) output pin follows the chip enable (E) input pin with timing shown in Table 2 on page 10. An internal switch connects VCC to VOUT. This switch has a voltage drop of less than 0.3 V (IOUT1). When VCC degrades during a power...

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M40SZ100W-9

For a further more detailed review of lifetime calculations, please see application note AN1012. Figure 5. Power-down timing VCC VPFD (max) VPFD VPFD (min) VSO

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M40SZ100W-10

Table 2. Power-down/up AC characteristics 1. Valid for ambient operating temperature: Ta = -40 to 85 °C; Vcc = 2.7 to 3.6 V (except where noted). 2. VpFD (max) to VpFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 ps after Vcc passes VpFD (min). 3. VpFD (min) to Vss fall time of less than tFB may cause corruption of RAM data.

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M40SZ100W-11

2.2 Power-on reset output All microprocessors have a reset input which forces them to a known state when starting. The M40SZ100W has a reset output (RST) pin which is guaranteed to be low by VPFD (see Table 7 on page 16). This signal is an open drain configuration. An appropriate pull-up resistor to VCC should be chosen to control the rise time. This signal will be valid for all voltage conditions, even when VCC equals VSS (with valid battery voltage). Once VCC exceeds the power failure detect voltage VPFD, an internal timer keeps RST low for tREC to allow the power supply to stabilize. 2.3 Reset...

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M40SZ100W-12

M40SZ100W If a battery low is generated during a power-up sequence, this indicates that the battery is below 2.5 V and may not be able to maintain data integrity in the SRAM. Data should be considered suspect, and verified as correct. A fresh battery should be installed. If a battery low indication is generated during the 24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal VCC is supplied. In order to insure data integrity during subsequent periods of battery back-up mode, the battery should be replaced....

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M40SZ100W-13

Operation Figure 8. Supply voltage protection VCC VCC

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M40SZ100W-14

Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4. Absolute maximum ratings 1. For SO package, Lead-free (Pb-free) lead finish: reflow at peak temperature of 260 °C (the time above 255 °C must not exceed 30 seconds). Caution: Negative undershoots...

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