Features • ACEPACK™ 1 power module — DBC Cu AI2O3 Cu • Converter inverter brake topology - 1600 V, very low drop rectifiers for converter - Soft and fast recovery diode • Integrated NTC Applications • Inverters • Motor drives Description This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. Product status DS11631 - Rev 6 - February 2018 For further information contact your local STMicroelectronics sales office.

1 Electrical ratings1.1 Inverter stage Limiting values at Tj= 25 °C, unless otherwise specified. 1.1.1 IGBTs Table 1. Absolute maximum ratings of the IGBTs, inverter stage

1.2 Brake stage Limiting values at Tj= 25 °C, unless otherwise specified. 1.2.1 IGBT Table 5. Absolute maximum ratings of the IGBT, brake stage

1.3 Converter stage Limiting values at Tj= 25 °C, unless otherwise specified. Table 9. Absolute maximum ratings of the bridge rectifiers

Figure 4. NTC resistance vs. temperature, zoom R (A) 800 700 600 500 400 300 85 90 95 100 105 110 Tc (°C) Table 12. ACEPACK™ 1 package

A1C15S12M3 Electrical characteristics (curves) Electrical characteristics (curves) Figure 5. IGBT output characteristics (VGE = 15 V, terminal) IC (A) Figure 6. IGBT output characteristics (TJ = 150 °C, terminal) IC (A) Figure 7. IGBT transfer characteristics (VCE = 15 V, terminal) IC (A) Figure 8. Switching energy vs. gate resistance E (mJ)

A1C15S12M3 Electrical characteristics (curves) Figure 9. Switching energy vs. collector current E (mJ) Figure 10. IGBT reverse biased safe operating area (RBSOA) IGBT021220161423FSOA Figure 11. Diode forward characteristics (terminal) IF (A) Figure 12. Diode reverse recovery energy vs. diode current slope Erec (mJ) Figure 13. Diode reverse recovery energy vs. forward current Erec (mJ) Figure 14. Diode reverse recovery energy vs. gate resistance Erec (mJ)

A1C15S12M3 Electrical characteristics (curves) Figure 15. Converter diode forward characteristics (terminal) IF (A) Figure 16. IGBT thermal impedance Zth(°C/W) Figure 17. Inverter diode thermal impedance Zth(°C/W)

Test circuits Figure 18. Test circuit for inductive load switching Figure 19. Gate charge test circuit Figure 20. Switching waveform Figure 21. Diode reverse recovery waveform Td(off) Tr(Ion)

Topology and pin description Figure 22. Electrical topology and pin description P Figure 23. Package top view with CIB pinout

Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

A1C15S12M3 ACEPACK™ 1 CIB solder pins package information ACEPACK™ 1 CIB solder pins package information Figure 24. ACEPACK™ 1 CIB solder pins package outline (dimensions are in mm) The lead size includes the thickness of the lead plating material. Dimensions do not include mold protrusion. Package dimensions do not include any eventu

A1C15S12M3 Revision history Table 13. Document revision history

Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 ACEPACK™ 1 CIB solder pins package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . ....

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