Ultra-High Linearity DPDT Switch CXM3645ER Description The CXM3645ER is a high power and ultra-high linearity DPDT switch for wireless communication systems. The CXM3645ER can be used for SVLTE and carrier aggregation requiring very high linearity. This IC has a 1.8 V CMOS compatible decoder. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity. (Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations ) Features ◆ Very Low Insertion loss: 0.23dB (Typ.) (Cellular Band ) 0.35 dB (Typ.) (IMT2000 ) ◆ Ultra-high linearity: IIP3 = 82dBm (Min.) for SVLTE 2f0 = -78dBm(Max) at Band13, Pin=25dBm 3f0 = -95dBm (Typ.) at Band17, Pin=25dBm ◆ Low voltage operation: VDD = 2.5 V ◆ No DC blocking capacitors required on RF ports ◆ 2 Control input ◆ Small package size: VQFN-18 pin (2.4 mm × 2.0 mm) ◆ Lead-Free and RoHS compliant Structure GaAs JPHEMT MMIC switch, CMOS decoder Moisture Sensitivity Moisture Sensitivity Level for this part is MSL= 2 Absolute Maximum Ratings ♦ Bias voltage ♦ Maximum input power ♦ Operating temperature This IC is ESD sensitive device. Special handling precautions are required.

Block Diagram DPDT Antenna Switch RF3 Decoder Logic MMIC Switch Active path

DC Bias Condition Parameter

Target Electrical Characteristics (Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V) Item All ports in active paths Insertion loss

Inter modulation distortion in Rx Band Switching speed Wakeup time Control current Supply current Pin = 25 dBm, 704 to 716 MHz (Band 17) Pin = 25 dBm, 777 to 787 MHz (Band 13) Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx) Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) Pin = 26 dBm, 2500 to 2690 MHz (Band 7) Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx) Measured with the recommended...

Triple Beat Ratio (VDD = 2.5 V, Ta = 25 °C) Condition Triple beat ratio Triple beat product at RF [MHz] * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit. * Electrical characteristics are measured with all RF ports terminated in 50 Ω. Measured with the recommended circuit.

Recommended Circuit (Top View) *1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias) *2 The DC levels of all RF ports are GND. *3 L1 (27nH) and C1(12pF) are recommended on Ant port for ESD protection. *4 C2(100pF) is recommended on VDD pin for Decoupling Capacitor.

VQFN-18P-Q3 Macro drawing (Reference) *Metal mask Ihickness : lOOtirn Mask (Open area) Resist (Open area)

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Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.