
SP14T Antenna Switch Module for 12TRx/2Tx with MIPI I/F for Qualcomm chipset The CXM3617ER is a SP14T antenna switch module for GSM / UMTS / CDMA / LTE multi-mode handset. The CXM3617ER has a +1.8 V CMOS compatible decoder with MIPI function for Qualcomm chipset. The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and high linearity. The device has low BOM with no DC blocking Capacitor. (Applications: GSM/TD-SCDMA/WCDMA/LTE multi-mode handset) 0.50 dB (Typ.) TRx (Cellular Band) 0.70 dB (Typ.) TRx (IMT Tx Band) Supports CMOS control for serial interface (MIPI I/F for Qualcomm chipset) Small Package Size: Lead-Free and RoHS Compliant Structure GaAs Junction Gate pHEMT (JPHEMT) MMIC Switch, CMOS Decoder This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits
Open the catalog to page 1Absolute Maximum Ratings ◆ Supply voltage ◆ Control voltage for MIPI Block Diagram of SP14T Antenna Switch Module with MIPI Level Shifter Decoder DC/DC Converter CMOS Switch Controller
Open the catalog to page 2Block Diagram
Open the catalog to page 3Truth Table State *1) State “L” means a switch “OFF”, state “H” means a switch “ON”.
Open the catalog to page 4Electrical Characteristics VDD = 2.5 V, Ta = 25 ˚C Item Insertion Loss
Open the catalog to page 6All Ports in Active Paths Wakeup Time Supply Current SCLK falling edge to 90% RF in Active Mode From Low Pow er Mode to Active Mode Inter Modulation Product Pow er in Rx Band
Open the catalog to page 7Corresponding Band of TRx (UMTS/CDMA/LTE) *1 Pin = 26 dBm, 452 to 468 MHz (Band Class 5) *2 Pin = 25 dBm, 704 to 787 MHz (Band 13, Band 17) *3 Pin = 26 dBm, 824 to 960 MHz (Band 5, Band 8) *4 Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band4 Tx) *5 Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) *6 Pin = 26 dBm, 2300 to 2400 MHz (Band 40) *7 Pin = 26 dBm, 2500 to 2690 MHz (Band 7) *8 Pin = 35 dBm, 824 to 915 MHz (GSM850/900 Tx) *9 Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx) *10 Pin = 10 dBm, 869 to 960 MHz (GSM850/900 Rx) *11 Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900...
Open the catalog to page 8Electrical Characteristics of Triple Beat Ratio VDD = 2.5 V, Ta = 25 °C Condition Item Triple Beat Ratio Triple Beat Product at TRx [MHz] Electrical characteristics are measured with all RF ports terminated in 50 . Measured with the recommended circuit Electrical Characteristics of Input IP2 VDD = 2.5 V, Ta = 25 °C Condition Electrical characteristics are measured with all RF ports terminated in 50 . Measured with the recommended circuit
Open the catalog to page 10MIPI Specification Features PM_TRIG with three triggers Software reset and debug using the RFFE_STATUS register Full speed write, Half speed read Programmable USID Control Characteristics Supply Voltage Signal level high SCLK write Frequency SCLK read Frequency SDATA/SCLK input capacitance Data setup time Data hold time Supply current (ACTIVE) *VDD = 2.5 V Supply current Low Power(disable) *VDD = 2.5 V Interface Supply Voltage Supply current (ACTIVE) *VIO = 1.8 V Supply current Low Power(disable) *VIO = 1.8 V *Turn on time: Time to guarantee RF performance after switch activation.
Open the catalog to page 11Explanation of Register Slave Address: 1011 Register Address Register Name Data Bits Read Write Antenna switch states (see Truth Table) Register 0 Write command sequence use. Trigger Supprt. Antenna switch states (see Truth Table) Read/Write command sequence use. Trigger Supprt. DATA_FRAME_PARITY_ERR READ_UNUSED_REG Power mode SOFTWARE RESET SPARE MANUFACTURER_ID USID (Table H)
Open the catalog to page 12REGISTER_0 Write command sequence Btauc Address „ „ „ Write command sequence (except REGISTER_0) Seue Addrcff 'A* Ife Command Rent fcr Addreff — Read command sequence Data frame from ANT Switch needs Half Speed function Data Trame from ANTSw Eel (Read Har Speed)
Open the catalog to page 13Register Map Register 0 Write command sequence use. 15 Slave Address Register Read/Write command sequence use. 24 Slave Address Register Address *Parity Bit A Frame shall end with a single parity bit. The parity bit shall be driven such that the total number of bits in the Frame that are driven to logic level one, including the parity bit, is odd.
Open the catalog to page 14Table A REGISTER 0 fbr AWT Switch State (OxOOOO) Table B REGISTER 0 fbr AMT Switch State (OxOOOO) All Data bits become 0 aftter Read Command Sequence is sent.
Open the catalog to page 15Table E Register for Power Mode & Trigger Mode (0x001C) Read Write Register Address Data Frame Register Address Parity Bit Initial value : [D7:D6] =10 Initial value : [D5:D3] =000 Initial value : [D2:D0] =000 Read Write Slave Address Command Frame Command Frame Slave Address Data Frame Table F Register for Product ID (0x001D) Address of Antenna Switch Module Read Only Parity bit for Command Frame Parity bit for Data Frame
Open the catalog to page 16Table G Register for Manufacturer ID (0x001E) Table H Register for Manufacturer ID and USID (0x001F) Address of Antenna Switch Module Slave Address Command Frame Register Address Parity Bit Read Write 1 Manufacturer ID [7:0]:B0h (SONY ID) 1 0 0 0 0 0 Parity bit for Data Frame Command Frame Slave Address Read Only Parity bit for Command Frame Read Write Register Address Parity Bit Data Frame Data Frame 0 Manufacturer ID [9:8]:01h (SONY ID) 1 0/1 0/1 Programmable USID 0/1 0/1 0/1 Parity bit for Data Frame For Programmable USID The PRODUCT_ID and the MANUFACTURER_ID match, then a new USID is programmed....
Open the catalog to page 17Recommended Circuit *1: No DC blocking capacitors are required on all RF ports. *2: DC levels of all RF ports are GND. *3: L1 (22 nH) and C1 (22 pF) are recommended on Ant port for ESD protection. *4: C2 (100 pF) and C3 (0.1 µF) are recommended.
Open the catalog to page 18VQFN-26P-02 Macro drawing (Reference) ■Pin pitch : Q.dmm HH : Mask (Open area) : Resist (Open area)
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