
High Cap Switchable Step Capacitor (SPI 32-bit) For Antenna Tuning CXM3604UR Description This product has single 5-bit capacitor array with high accuracy. Sony GaAs JPHEMT process is utilized for antenna tuning solution which needs high linearity and high Quality factor. Features ◆ 5 bits resolution Switchable Step Capacitor ◆ High power handling and High linearity ◆ High Q factor and High accuracy capacitor (+/-5 % typ.) ◆ Low insertion loss ◆ Through path ◆ Standby mode (Wakeup time < 40 μs) ◆ Applicable frequency 100 MHz to 3 GHz ◆ SPI 32-bit interface (1.8 V typ.) ◆ Low voltage operation : 2.4 V to 3.3 V ◆ Small package: UQFN-12P (2.2 mm × 2.2 mm × 0.6 mm Max.) ◆ Robustness against ESD ◆ Lead-Free and RoHS Compliant Structure 5 bits Capacitor Array: GaAs Junction Gate pHEMT (JPHEMT) MMIC Driver: CMOS This IC is ESD sensitive device. Special handling precautions are required. 1
Open the catalog to page 1Block Diagram & Pin Configuration
Open the catalog to page 2Truth Table Function Write mode Description Write to the Device Address (Slave Type) Address (Slave Identifer) Address (Slave SPI register) Not Used Standby*1 F1 selected F2 selected F3 selected F4 selected F5 selected F6 selected Fixed Fixed Fixed Fixed Fixed Fixed Fixed Fixed Fixed *1 Standby Standby bit is for low current operation in SSC disabled in mobile phone. On Standby mode bias voltage for SSC part is shutoff. Regardless of standby and active, IC can receive SPI data during supplying regular voltage to SPI_VDD.
Open the catalog to page 3DC Bias Condition Ta = 25 ˚C Parameter SPI_CLK(H) SPI_DATA(H) SPI_FRM(H) SPI_CLK(L) SPI_DATA(L) SPI_FRM(L) SPI_CLK SPI_DATA SPI_FRM Address bits Data bits Total bits Clock rate Clock edge (data sampling) SPI_FRM tCWL tCWH SPI_CLK SPI_DATA Absolute Maximum Ratings VDD Control Voltage Maximum input power Bias Voltage Operating Temperature Storage Temperature
Open the catalog to page 4Electrical Characteristics Item SPI_Bias current RF pins 50 Ω terminated. No RF power input. SPI_VDD = 1.8 V Time from SPI_VDD, turn on to SPI_FRM H_level Clock frequency Clock cycle SPI_VDD Enable CLK_Freq = 26 MHz Clock begin time Clock width High Data setup time Data hold time Wake-up time SPI_FRM = H, When signal is input. Wake-up time of inside DC-DC converter (VDD On, release standby mode) Active mode, SPI:bit[16] = H Standby mode, SPI:bit[16] = L Active mode, SPI:bit[16] = H Series connection Transmission Performance Shunt connection Electrical Characteristics are measured with all RF...
Open the catalog to page 5Electrical Characteristics are measured with all RF ports terminated by 50 Ω.
Open the catalog to page 6Series connection Electrical Characteristics are measured with all RF ports terminated by 50 Ω. Shunt connection
Open the catalog to page 7Shunt connection Harmonics under Variable LOAD Series connection Time from falling edge of SPI_FRM to 100 % RF transient power Switching Time
Open the catalog to page 8Series connection Case *1: RF1 and RF2 connecting to signal line. *2: Cbypass = 0.1 μF *3: Inductor value depending on design. DC level of both RF1 and RF2 is GND.
Open the catalog to page 9Shunt connection Case *1: RF1 port connecting to signal line, RF2 port connecting to gnd. DC level of RF1 is GND. *2: Cbypass = 0.1 μF.
Open the catalog to page 10■PKG : 2,2ramx2.2mm * Metal mask "thickness : 110(jm
Open the catalog to page 11cM^Z I-' v2iae^ h frag; 3:: 7 hB£i*i 1) LOT HP- I NM 3 :HAP.^CTE^S : SERIAL CODE I IN SECT IDS B-_ ( F:LL:H HULES ^BBEVUTISHS._ PANJFAMTUHIHS h IHSPL^E] Ht F:iLL:nh(i f.inw HIT S'HEK I ft If EAR :0[E : THE 1ST BIT OF A 3ISART SYSTEM BIT E V JTEH 13 CI SPLAT E 3 IN I DCT i IN S E C 710 h i. I) TYPE NO. < HAT 2 U^CTE^S ) IN SECTION 1_ ( FH MDRE TH*N 2 LH^RA^TER5 FQLLOX RULES FOR (BEBE1/1.*TIONS. I
Open the catalog to page 13Note Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits
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