High-speed Buffer Amplifier for CCD Image Sensor The CXA3791 EN is a high-speed buffer amplifier IC. (Applications: CCD image sensor output buffers, Digital still cameras, Camcorders, Other general buffers) (IDRV = 50uA (180kQ when Vcc = 13V), ISF pin connected to GND, during no signal) ♦ High-speed response: 500V/u.s (IDRV = 50uA (180kQ when Vcc = 13V), CL = 20pF) ♦ Internal sink current mode for CCD with open source output (Settable by external resistance RISF) ♦ Enables to set the responsibility by changing the drive current by an external resistor Bipolar silicon monolithic IC Absolute Maximum Ratings ♦ Storage temperature Tstg -65 to+150 °C ♦ Allowable power dissipation PD 0.22 W (when mounted on a two-layer board; 13mm x 13mm, t = 0.63mm) Recommended Operating Conditions Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

Block Diagram and Pin Configuration (Top View) ISF Pin Description and I/O Pin Equivalent Circuit Pin No. 2 5 Standard voltage level 0V 13V Equivalent circuit — — Description GND. Supply voltage input. External resistor connection for setting the sink current for CCD with open source output. Connect an external resistor between this pin and VCC (Pin 5). Connect this pin to GND (Pin 2) when not using this function. * Set the resistance so that ISF current is 90A or less. External resistor connection for setting the drive current. Connect an external resistor between this pin and VCC (Pin5). *...

Electrical Characteristics (Ta = 25C, VCC = 13V, RIDRV = 180k, ISF pin: connected to GND) DC Characteristics Item Supply current Measurement conditions Voltage gain RIDRV = 78k RIDRV = 120k RIDRV = 180k RIDRV = 270k Input bias current Sync current Voltage gain

AC Characteristics (Ta = 25C, VCC = 13V, IDRV = 50A (180k when VCC = 13V), ISF pin: connected to GND, RL = 15, CL = 20pF) Item Measurement conditions Rise time Fall time Rise time, fall time and I/O delay time

Evaluation Circuit

Description of Operation Current Settings 1. Output Drive Current The small signal output impedance of the OUT pin (Pin 3) can be set by connecting the IDRV pin (Pin 4) to VCC through a resistor. The inflow current to the IDRV pin is multiplied by 10 times inside the IC, and flows as the output stage idling current. The IDRV pin has an internal 50k resistor, so the inflow current to the IDRV pin can be calculated as follows. IIDRV = (VCC – VBE 2)/(RIDRV + 50k) = (13 – 1.46)/(180k + 50k) = 50.2A Here, VCC = 13V, VBE = 0.73V (typ.), and RIDRV = 180k. The small signal output impedance at this time...

Example of Representative Characteristics (Upper side) I/O voltage range vs. IDRV pin setting resistance (Lower side) I/O voltage range vs. IDRV pin setting resistance IDRV pin setting resistance [kΩ] IDRV pin setting resistance [kΩ] Current consumption vs. IDRV pin setting resistance Sink current vs. ISF pin setting resistance 7.0 IDRV pin setting resistance [kΩ] Current consumption vs. Supply voltage Current consumption vs. Operating temperature 2.0

I/O offset voltage vs. Supply voltage I/O offset voltage vs. Operating temperature Input bias current vs. Supply voltage Input bias current vs. Operating temperature Input bias current [µA] Input bias current [µA] Sink current vs. Supply voltage Sink current vs. Operating temperature 3.4

2.0 Ta = 25˚C, Idrv = 50µA, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns 2.5 2.0 1.5 Idrv = 50µA, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns I/O delay time vs. Supply voltage I/O delay time vs. Operating temperature 2.00 1.25 1.00 0.75 Ta = 25˚C, Idrv = 50µA, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns Idrv = 50µA, CL = 20pF, RL = 15Ω, Input DC offset = VCC – 5V, Input amplitude = 1.0V, Input rise, fall time = 2.0ns Positive...

Application Circuit 1 when using CCD with open source output Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

Application Circuit 2 when using CCD with internal current source Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same.

Notes on Operation Provide the widest GND pattern possible on the board. Use a 1000pF (recommended) and a 0.1F (recommended) ceramic capacitors in parallel for the bypass capacitor connected between the power supply and GND, and connect them as close to the IC pins as possible. Load capacitance causes the input/output wiring response to worsen and results in noise. Use the shortest wiring layout possible, and shield it with GND. When the output pin (Pin 3) is shorted to either the power supply or GND, an overcurrent may flow to the output stage elements and damage them. When the input pin (Pin...

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