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DDR4 SDRAM SO-DIMM Based on 4Gb A-die

DDR4 SDRAM SO-DIMM Based on 4Gb A-die
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DDR4 SDRAM SO-DIMM Based on 4Gb A-die

Product catalog summary
Overview: The document provides comprehensive technical specifications and guidelines for SK hynix's 260-pin DDR4 SDRAM SO-DIMM modules, designed for micro servers and mobile personal computers. These modules utilize 4Gb A-die technology, offering high-speed and low-power memory solutions.
Revision History: Since its initial release in December 2014, the document has undergone several revisions, with the latest (1.7) in March 2016 updating the 2133Mbps specification and JEDEC standards.
Specifications:
  • Power Supply: VDD and VDDQ at 1.2V, VPP at 2.5V, and VDDSPD ranging from 2.25V to 3.6V.
  • Data Transfer Rates: Supports PC4-2400, PC4-2133, PC4-1866, and PC4-1600.
  • Features: Includes ECC error correction, On-Die Termination (ODT), temperature sensor with integrated SPD, and RoHS compliance.
Ordering Information: Lists part numbers with densities, organizations, and component compositions, ranging from 2GB to 8GB modules.
Key Parameters: Detailed timing parameters for different DDR4 grades, including CAS latency, tRCD, tRP, tRAS, and tRC values.
Pin Descriptions: Detailed descriptions of pin functions, including address, bank select, clock enable, chip select, and data strobe functions.
Functional Block Diagrams: Includes diagrams for 2GB and 4GB modules, illustrating internal architecture and connections.
Connection Instructions: Guidelines for connecting SPD A2 input and resistor installation, with resistor values under 100 Ohms being acceptable.
Resistor Specifications: General resistor values are 15Ω±5%, and ZQ resistors are specified at 240Ω±1%.
Module Specifications: Configurations for 4GB, 8GB, and 8GB (1Gx72) modules, including pin assignments and signal paths.
Absolute Maximum Ratings: Voltage ratings for VDD, VDDQ, and VPP, with maximum values of 1.5V for VDD/VDDQ and 3.0V for VPP. Storage temperature ranges from -55°C to +100°C.
Operating Temperature Range: Normal operating temperature is 0°C to 85°C, with an extended range of 85°C to 95°C requiring increased refresh rates.
Recommended DC Operating Conditions: VDD and VDDQ should be between 1.14V and 1.26V, and VPP between 2.375V and 2.75V.
AC & DC Input Levels: Input logic levels for single-ended and differential signals, with emphasis on maintaining monotonic slopes for differential signals.
Timing and Voltage Considerations: Setup and hold times influenced by VREF variations, with specific slew rates and timing requirements for differential signals.
Differential Output Slew Rate: Defined and measured between VOLdiff(AC) and VOHdiff(AC), with parameters for DDR4-1600 to DDR4-3200.
Single-ended AC & DC Output Levels: Specific output parameters during Connectivity Test Mode, with a test load of 50Ω terminated by VTT = 0.5 * VDDQ.
Speed Bins and Operations: Detailed speed bin tables for DDR4-1600, 1866, 2133, and 2400, including parameters like tAA, tRCD, tRP, tRAS, and tRC.
IDD, IPP, and IDDQ Measurement Conditions: Defined measurement conditions for IDD, IPP, and IDDQ currents, including test load and patterns.
Measurement Timings and Conditions: Timings for IDD, IPP, and IDDQ measurement-loop patterns for different DDR4 speeds.
Specifications:
  • Precharge Standby Currents: Defined modes with specific conditions like CAL enabled, Gear Down mode, DLL disabled, and CA parity enabled.
  • Power-Down Currents: IDD2P and IPP2P defined with conditions like CKE low, external clock on, and stable command inputs.
  • Active Standby Currents: IDD3N and its variants described with conditions for active standby with all banks open.
  • Burst Read/Write Currents: IDD4R and IDD4W specified for operating burst read and write operations.
  • Refresh Currents: IDD5B and its variants describe burst refresh currents with different refresh rates.
  • Self-Refresh Currents: IDD6N, IDD6E, IDD6R, and IDD6A defined for self-refresh operations across different temperature ranges.
  • Bank Interleave Read Currents: IDD7 describes operating bank interleave read currents.
  • Maximum Power Down Currents: IDD8 and IPP8 mentioned as maximum power down currents.
Procedures and Configurations:
  • Mode Register Settings: Detailed settings for enabling output buffers, driver impedance control, and various features.
  • Measurement Patterns: Tables provide specific command sequences and toggling patterns for measuring different current modes.
Key Tables:
  • Table 3: Describes the measurement-loop pattern for IDD0, IDD0A, and IPP0.
  • Table 4: Provides the pattern for IDD1, IDD1A, and IPP1 measurements.
  • Table 5: Details the pattern for IDD2N and related currents.
  • Table 6: Specifies the pattern for IDD2NT and IDDQ2NT measurements.
Conclusion: The document serves as a comprehensive guide for understanding and measuring various current consumption modes in memory devices, with detailed conditions and configurations for each mode.
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Catalog excerpts

DDR4 SDRAM SO-DIMM Based on 4Gb A-die-1

*SK hynix reserves the right to change products or specifications without notice.

 Open the catalog to page 1
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-3

Description SK hynix Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outine Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices. These DDR4 SDRAM Unbuffered Small Outline DIMMs are intended for use as main memory when installed in systems such as micro servers and mobile personal computres.

 Open the catalog to page 3
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-5

CAS_n is a multiplexed function with A15. RAS_n is a multiplexed function with A16. WE_n is a multiplexed function with A14.

 Open the catalog to page 5
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-11

D0 Serial PD with Thermal sensor D2 VDDSPD " VPP" VDD " V-TT-VREFCA- 1. Unless otherwize noted, resistor values are 15^+5%. 2. ZQ resistors are 240^+1%.For all other resistor values refer to the appropriate wiring diagram.

 Open the catalog to page 11
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-12

DQS_t ^ % Serial PD with Thermal sensor Note: 1. Unless otherwize noted, resistor values are 15 Q±5%. 2. ZQ resistors are 240Q±1%.For all other resistor values refer to the appropriate wiring diagram. 3. To connect the SPD A2 input to the edge connector pin 166 install R1. To tie the SPD input A2 to ground install R2. Do not install both R1 and R2. The values for R1 and R2 are not critical. Any value less than 100 Ohms may be used.

 Open the catalog to page 12
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-13

DQS_t dqs_c D4 i DQ [7:0] DM_n/DBI_n DQS_t dqs_c D8 i DQ [7:0] DM_n/DBI_n Serial PD with Thermal sensor Note: 1. Unless otherwize noted, resistor values are 15 Q±5%. 2. ZQ resistors are 240Q±1%.For all other resistor values refer to the appropriate wiring diagram. 3. To connect the SPD A2 input to the edge connector pin 166 install R1. To tie the SPD input A2 to ground install R2. Do not install both R1 and R2. The values for R1 and R2 are not critical. Any value less than 100 Ohms may be used.

 Open the catalog to page 13
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-15

DQS_t ^ = S Serial PD with Thermal sensor Vss Note: 1. Unless otherwize noted, resistor values are 15 ^+5%. 2. ZQ resistors are 240^+1%.For all other resistor values refer to the appropriate wiring diagram. 3. SDRAMs for ODD ranks (D8 to D15), which are placed on the back side of the module use the address mirroing for A4-A3, A6-A5, A8-A7, A13-A11, BA1-BA0 and BG1-BG0. More detail can be found in the DDR4 SODIMM Common Section of the Design Specification.

 Open the catalog to page 15
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-16

DQS_t DQS_c ' ■ _ DQS_t DQS_c ' - Serial PD with Thermal sensor 1. DQ-to-I/O wiring is shown as recommended but may be changed. 2. Unless otherwize noted, resistor values are 15Q±5%. 3. See the Net Structure diagrams for all resistors associated with the command, address and control bus. 4. ZQ resistors are 240Q±1%.For all other resistor values refer to the appropriate wiring diagram.

 Open the catalog to page 16
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-17

Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measure ment conditions, please refer to the JEDEC document JESD51-2. 2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions. 3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC case temperature. Full specifications are guaranteed in this range, but the following additional conditions...

 Open the catalog to page 17
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-18

Recommended DC Operating Conditions Symbol 1. Under all conditions VDDQ must be less than or equal to VDD. 2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.

 Open the catalog to page 18
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-19

Single-ended AC & DC input levels for Command and Address Symbol 1. See "Overshoot and Undershoot Specifications" 2. The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1% VDD (for reference : approx. ± 12mV)

 Open the catalog to page 19
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-20

AC and DC Input Measurement Levels: VREF Tolerances The DC-tolerance limits and ac-noise limits for the reference voltages VREFCA is illustrated in Figure below. It shows a valid reference voltage VREF(t) as a function of time. (VREF stands for VREFCA). VREF(DC) is the linear average of VREF(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table X. Furthermore VREF(t) may temporarily deviate from VREF(DC) by no more than ± 1% VDD. voltage Illustration of VREF(DC) tolerance and VREF AC-noise limits The voltage levels for setup and hold time measurements...

 Open the catalog to page 20
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-21

AC and DC Logic Input Levels for Differential Signals Differential signal definition tDVAC VIH.DIFF.AC.MIN Differential Input Voltage (CK-CK) (CK_t - CK_c) VIL.DIFF.AC.MAX tDVAC time NOTE: 1. Differential signal rising edge from VIL.DIFF.MAX to VIH.DIFF.MIN must be monotonic slope. 2. Differential signal falling edge from VIH.DIFF.MIN to VIL.DIFF.MAX must be monotonic slope. Definition of differential ac-swing and “time above ac-level” tDVAC

 Open the catalog to page 21
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-23

Single-ended requirements for differential signals Each individual component of a differential signal (CK_t, CK_c) has also to comply with certain requirements for single-ended signals. CK_t and CK_c have to approximately reach VSEHmin / VSELmax (approximately equal to the ac-levels (VIH.CA(AC) / VIL.CA(AC) ) for ADD/CMD signals) in every half-cycle. Note that the applicable ac-levels for ADD/CMD might be different per speed-bin etc. E.g., if Different value than VIH.CA(AC100)/VIL.CA(AC100) is used for ADD/CMD signals, then these ac-levels apply also for the single-ended signals CK_t and CK_c...

 Open the catalog to page 23
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-24

2. Vih(AC)/Vil(AC) for ADD/CMD is based on Vrefca; 3. These values are not defined, however the single-ended signals CK_t - CK_c need to be within the respective limits (Vih.ca(DC) max, VIL.CA(DC)min) for single-ended signals as well as the limitations for overshoot and undershoot.

 Open the catalog to page 24
DDR4 SDRAM SO-DIMM Based on 4Gb A-die-25

Address and Control Overshoot and Undershoot specifications AC overshoot/undershoot specification for Address, Command and Control pins Specification Parameter Maximum peak amplitude above VDD Absolute Max allowed for overshoot area Delta value between VDD Absolute Max and VDD Max allowed for overshoot area Maximum peak amplitude allowed for undershoot area Maximum overshoot area per 1tCK Above Absolute Max Maximum overshoot area per 1tCK Between Absolute Max Maximum undershoot area per 1tCK Below VSS Overshoot Area above VDD Absolute Max VDD Absolute Max Overshoot Area Between VDD Absolute Max...

 Open the catalog to page 25

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