SKM450GB33F Absolute Maximum Ratings Symbol ICnom ICRM VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150 °C, VCES ≤ 3300 Operation Inverse diode IFnom IFRM 3.3 kV F-IGBT 450A half bridge Low Vce, Eoff and Rth High power density Low inductance module design T-sensor Easy paralleling and easy power scaling • For flexible and compact medium voltage inverters Module It(RMS) Characteristics Symbol IGBT VCE(sat) VGE(th) ICES Cies QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C VGE = 0 V, VCE = 10 V, f = 0.1 MHz, Tvj = 25 °C VGE = -15V ... 15V Tj = 25 °C VCC = 1800 V IC = 450 A VGE = +15/-15 V RG on = 6.8 Ω RG off = 12 Ω di/dton = 3500 A/µs di/dtoff = 3400 A/µs du/dt = 1250 V/µs Ls = 35 nH per IGBT

Inverse diode IF = 450 A VF VGE = 0 V chiplevel IF = 450 A IRRM di/dtoff = 3600 A/µs Qrr VGE = ±15 V Err VCC = 1800 V trr Ls = 35 nH per diode Rth(j-c) Between C1(main) and E2 (main) measured per TC = 25 °C switch, RC AUX C´ + TC = 125 °C RE AUX E´ per switch 3.3 kV F-IGBT 450A half bridge Low Vce, Eoff and Rth High power density Low inductance module design T-sensor Easy paralleling and easy power scaling • For flexible and compact medium voltage inverters

Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 6: Typ. gate charge characteristic

Fig. 9: Transient thermal impedance Fig. 10: Typ. diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. diode peak reverse recovery current Fig. 12: Typ. diode peak reverse recovery charge

SKM450GB33F This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be...