Catalog excerpts
SKM450GB33F Absolute Maximum Ratings Symbol ICnom ICRM VCC = 2200 V, Ls = 40 nH, RGon = 6.8 Ω, RGoff = 68 Ω, VGE ± 15, Tj = 150 °C, VCES ≤ 3300 Operation Inverse diode IFnom IFRM 3.3 kV F-IGBT 450A half bridge Low Vce, Eoff and Rth High power density Low inductance module design T-sensor Easy paralleling and easy power scaling • For flexible and compact medium voltage inverters Module It(RMS) Characteristics Symbol IGBT VCE(sat) VGE(th) ICES Cies QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C VGE = 0 V, VCE = 10 V, f = 0.1 MHz, Tvj = 25 °C VGE = -15V ... 15V Tj = 25 °C VCC = 1800 V IC = 450 A VGE = +15/-15 V RG on = 6.8 Ω RG off = 12 Ω di/dton = 3500 A/µs di/dtoff = 3400 A/µs du/dt = 1250 V/µs Ls = 35 nH per IGBT
Open the catalog to page 1Inverse diode IF = 450 A VF VGE = 0 V chiplevel IF = 450 A IRRM di/dtoff = 3600 A/µs Qrr VGE = ±15 V Err VCC = 1800 V trr Ls = 35 nH per diode Rth(j-c) Between C1(main) and E2 (main) measured per TC = 25 °C switch, RC AUX C´ + TC = 125 °C RE AUX E´ per switch 3.3 kV F-IGBT 450A half bridge Low Vce, Eoff and Rth High power density Low inductance module design T-sensor Easy paralleling and easy power scaling • For flexible and compact medium voltage inverters
Open the catalog to page 2Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 6: Typ. gate charge characteristic
Open the catalog to page 3Fig. 9: Transient thermal impedance Fig. 10: Typ. diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. diode peak reverse recovery current Fig. 12: Typ. diode peak reverse recovery charge
Open the catalog to page 4SKM450GB33F This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX. *IMPORTANT INFORMATION AND WARNINGS The specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may...
Open the catalog to page 6All SEMIKRON catalogs and technical brochures
-
Power Electronics
265 Pages
-
SKM1000GAL17R8
8 Pages
-
eMPack A4
32 Pages
-
SKT 16
5 Pages
-
SKT 300
5 Pages
-
SKT 250
5 Pages
-
SKT 160
5 Pages
-
SKT 130
5 Pages
-
SEMIKUBE
2 Pages
-
SEMISTACK CLASSIC SKSE
2 Pages
-
SEMISTACK RE
2 Pages
-
SEMiX
4 Pages
-
SEMiX 5
4 Pages
-
SKAI IGBT POWER
4 Pages
-
SKAI MOSFET
2 Pages
-
SKiiP X
4 Pages
-
SKiiPRACK
2 Pages
-
SKiM 63/93
4 Pages
-
SKYPER 12 PF
2 Pages
-
SKYPER 42
2 Pages
-
SKYPER 42 LJ
2 Pages
-
MiniSKiiP
127 Pages
-
Flyer 3-Level Power Modules
4 Pages
-
Flyer 2nd Source
2 Pages
-
Flyer SKiiP
2 Pages
-
Flyer SEMiX 6
4 Pages
-
Flyer SEMiX 5
4 Pages
-
Flyer SEMiX
4 Pages
-
Flyer SEMITRANS 20
2 Pages
-
Flyer SEMITRANS 10 DPD
4 Pages
-
Flyer SEMITRANS 10
4 Pages
-
Flyer SEMITRANS 2-9
4 Pages
-
Flyer SEMITOP E1/E2
4 Pages
-
Flyer SEMITOP
4 Pages
-
Flyer SEMISTART
2 Pages
-
Flyer SEMIPACK
4 Pages
-
Flyer SEMIKUBE SlimLine
4 Pages
-
SEMIKRON Product Catalogue 2017-2018
127 Pages
-
SEMITRANS 20
2 Pages
-
SKYPER 12
2 Pages
-
SKYPER Prime O
4 Pages
-
Flyer SEMITOP Press-Fit
2 Pages