Circuit Protection Solutions 2013
32Pages

Providing a comprehensive portfolio of ISO and EMI/RFI protection devices from OH Semiconductor.

Introduction Electro-Static Discharge protection and Electro-Magnetic Interference is becoming an increasingly important consideration for all electrical devices. Increased feature sets demanded by consumers, and sleek industrial designs require enhanced performance of ESD and EMI products in small outline packages. current path to ground during an ESD event. This is illustrated in Figure 1; protection products for new integrated circuits need lower dynamic resistance (Rdyn) to avoid voltages that cause damage. Adding to this challenge, ESD protection products must have lower and lower...

Figure 3. SCR Characteristic and Application Load Line holding current, IH, of the SCR protection device, as shown in Figure 3, a latch-up state cannot be maintained. A more complete discussion of this is given in Application Note AND9116/D. Evaluating ESD Protection Effectiveness As the design window for protection shrinks, choosing ESD protection products with low Rdyn becomes more important to ensure that clamping voltages do not exceed the safe protection window of new chipsets. Suppliers of ESD protection products must therefore provide information on the effectiveness of the product...

Silicon vs. Passive Technology Protection and filtering solutions from ON Semiconductor are based on state of the art silicon processes. In contrast, there are other types of low cost passive solutions that use a combination of ceramic, ferrite and Multi-Layer Varistor (MLV) materials. These types of devices historically have poor ESD clamping performance. In some instances the voltages that downstream devices can be exposed to are an order of magnitude or more than in an ON Semiconductor solution. This is illustrated in the ESD screen shot in Figure 6, comparing an ON Semiconductor silicon...

speed signals such as audio and inductor-capacitor (LC) versions for higher speeds and power sensitive interfaces. Low pass filters are available with cut off frequencies ranging from 700 MHz to up to 6 GHz. Cut off frequency is illustrated with the S21 plot in Figure 10. -3dB cutoff frequency 0 Pass Band Stop Band astop Transition Band Figure 10. Single ended low pass filter characteristics transition. The specifications for high speed interface standards define a mask, the hexagon in the center of the eye. The data pattern must not cross the mask, thereby ensuring that data can be read...

Surge Protection For lower data-rates (10/100BASE-T), ON Semiconductor offers a combination of crowbar devices known as thyristor surge protector devices (TSPD), and transient voltage suppressor (TVS) devices similar to those used in ESD protection. TSPDs offer the advantage of lower clamping voltages and possess higher surge current capability; for instance, they meet the 100 A requirement of the GR-1089 10/1000 μs standard. As a result, they are appropriate for primary side protection, also known as the “line-side.” TVS clamping devices support surge levels for the 8/20 μs pulse and are...

Thunderbolt Four High Speed Pairs, up to Six Additional Lines, Low Capacitance ESD Key Requirement Thunderbolt Connetctor Top Layer • 0.25 pF • Flow through routing • Grounds between pairs for reduced cross talk • Industry leading clamping voltage Thunderbolt Connetctor Bottom Layer ESD9X Pins 3, 6, 9, 10 Aux– PWR Top layer Bottom layer

USB 2.0 for Consumer and Portables One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement • 0.5 - 0.8 pF • 4 low speed + 1 VBUS integrated – can protect up to 2 USB ports • Industry leading low clamping voltage One High Speed Pair, V CC , Common Mode Filter + ESD Protection Key Requirement • Cap < 1.5 pF • Common Mode Filtering • 0.5 - 0.8 pF • Integrated EMI suppression with ESD protection • Industry leading low clamping voltage Device EMI2121 EMI2124 CM Attenuation DM Bandwidth @ 800 MHz (–dB) F3dB (GHz) Package –25 –25 WQFN WQFN Top layer Other layer Suppresses Common...

USB 3.0 for Consumer Two SuperSpeed Pairs, One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement • Cap < 0.5 pF • 0.30 pF or less • Flow through routing • Industry leading low clamping voltage versus competitors StdA_SSTX+ Vbus StdA_SSTX- ESD7L5.0 Top layer Other layer ESD8004 — 0.32 pF, 2 Layer Routing (ESD8004; ESD7L5.0 for D+, D- Lines)

eSATA Two High Speed Pairs, Low Capacitance ESD Protection Key Requirement • Cap < 0.4 pF Features • 0.3 pF • Flow through routing • Industry leading low clamping voltage Circuit Protection Solutions

Parallel Interfaces for Cameras and Displays Parallel Intefaces from 4 to 12 Lines, Low Pass LC Filters + ESD Protection Key Requirement Features • 4/6/8 Channel LC EMI+ESD • –35 dB Stop Band Attenuation From 700 MHz • 700 MHz Stopband for 4G LTE • 0.4 mm pin pitch • 0.55 max package height Flex Cable Connector Camera Module or LCD Controller EMI720x, CM1693, CM1457 Series Typical Interface 700 MHz Series Insertion Loss Curves Device EMI720x Series EMI940x Series CM1693 Series CM1457 Series Resistance Inductance Capacitance Attenuation Bandwidth (W) (nH) @ 2.5 V (pF) @/Freq (–dB) F3dB (MHz)...

Serial Interfaces for Cameras and Displays 3 to 5 Pairs of High Speed Serial Lanes, Common Mode Filters + ESD Protection Key Requirement Application Processor CSI Receiver • 2, 3 and 4 pair configurations • Integrated ESD protection • –25 dB common mode rejection starting at 800 MHz • 0.5 mm pin pitch • 0.50 and 0.75 max package heights Camera Mobile MIPI Application CM Attenuation DM Bandwidth @ 800 MHz (–dB) F3dB (GHz) Package –25 –25 –25 –25 –25 WQFN WQFN UDFN UDFN UDFN Differential Mode Series Insertion Loss Curves Page 12 Circuit Protection Solutions