Circuit Protection Solutions 2011
28Pages

Enabling Energy Efficient Solutions Circuit Protection Solutions Providing a comprehensive portfolio ofESD and EMI/RFI protection devices from ON Semiconductor.

Introduction Electro-Static Discharge protection and Electro-Magnetic Interference is becoming an increasingly important consideration for all electrical devices. Increased feature sets demanded by consumers, and sleek industrial designs require an increased attention to the performance of ESD and EMI in small outline packages. External Protection Requirement Advanced system-on-chip (SOC) designs are being manufactured in the most advanced technologies. In order to optimize functionality and chip size, designers are constantly reducing the minimum feature sizes within their designs. But at...

TLP creates l-V curves in which each data point is obtained with a square pulse that closely matches an ESD event in terms of current shape and pulse width. TLP pulse lengths are typically 100 ns, with pulse amplitudes up to 40 A. Sample TLP l-V curves are shown in Figure 3, comparing an ON Semiconductor product with a competitor's product intended for the same application. The ON Semiconductor product turns on at a lower voltage and has significantly lower dynamic resistance than the competitor's device. The TLP l-V curves and parameters extracted from them can be used to compare the...

Enabling Energy Efficient Solutions Because of their material make up, some passive devices tend to be inconsistent over temperature and therefore less reliable in harsh environments. Maintaining Signal Integrity ESD and EMI solutions are there to protect against unwanted signals that interfere with the overall system performance. During a system's normal operation, protection devices must not degrade signal integrity. In other words, they have to be completely transparent. It is important to demonstrate that protection products do not degrade signal integrity. ON Semiconductor uses several...

standard. Protection for this interface consists of ensuring that transverse (metallic or differential) surge strikes do not damage sensitive downstream chips such as PHYs. This is achieved by connecting shunt protection elements from line-to-line (for each pair of lines) that transfer the incoming hostile surge energy back towards the source. -3dB cutoff frequency 0 apass a3dB Pass Band Stop Band Magnitude (dB) astop Transition Band 100k 1M 10M 100M 1G 10G 100G Frequency (Hz) Figure 8. Single ended low pass filter characteristics In these applications, Common Mode Filters (CMF) can be used...

Protection for SmartPhone Applications Input Interface FM Receiver Bluetooth Antenna Power Amp RF Transceiver Audio Filter Mic Amp Clock Generation Battery Protection Page 6 Display Backlight/ Power Vibra Motor GPS Receiver Cellular Antenna Power Adapter Active EMI Suppression Bluetooth Transceiver GPS Antenna External Power Souce LED, Xenon Flash Driver NCF Interface WLAN Antenna Real Time Clock Memory WLAN Transceiver NFC Antenna Microphone Image Sensor Lens LED Driver (Keypad) FM Antenna Lens Motor Driver Memory (Flash RAM) Memory (SD RAM) AMIC Logic, Signal and IF Video Encoder USB...

Thunderbolt Four High Speed Pairs, up to Six Additional Lines, Low Capacitance ESD + Common Mode Filter Key Requirement ESD9X GND • Cap < 0.3 pF Hot Plug Detect D3- Features CONFIG1 ESD7008 • 0.15 pF • Flow through routing • Grounds between pairs for reduced cross talk • Industry leading clamping voltage D3+ CONFIG2 GND GND D2D0D2+ D0+ GND GND D1AUX_CH+ = D1+ AUX_CHGND Device ESD7104 ESD7008 Lines Capacitance (pF) Package Size (mm) 4 8 0.3 0.12 UFDN-10 UFDN-18 2.5 x 1.0 5.5 x 1.5 DP_PWR CONFIG1 AUX_CH+ Top layer Other layer CONFIG2 NUP4114 Without ESD ON Semiconductor Thunderbolt @ 10 Gb/s...

USB 2.0 for Consumer and Portables One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement I/O 1 I/O 2 I/O 3 I/O 4 • Cap < 1.5 pF Features GND • 0.5 - 0.8 pF • 4 low speed + 1 VBUS integrated – can protect up to 2 USB ports • Industry leading low clamping voltage D+ = DVBUS Lines NUP4114UPX NUP4114UCL NUP4114H ESD7L5.0 ESD9L5.0 Capacitance (pF) Package 0.8 0.5 0.8 0.5 0.5 SOT-563 SC-88 TSOP-6 SOT-723 SOD-923 NUP4114 Size (mm) 4 4 4 2 1 Device 1.6 x 1.6 2.0 x 2.1 3.0 x 2.75 1.2 x 1.2 1.0 x 0.6 One High Speed Pair, V CC , Common Mode Filter + ESD Protection Key Requirement...

USB 3.0 for Consumer Two SuperSpeed Pairs, One High Speed Pair, V CC , Low Capacitance ESD Protection Key Requirement • Cap < 0.5 pF USB 3.0 Type A Connector USB 3.0 Type A Connector Features • 0.15 pF • Flow through routing • Industry leading low clamping voltage versus competitors StdA_SSTX+ StdA_SSTX+ Vbus StdA_SSTX- ESD7x04 ESD7008 Vbus D- NC GND_DRAIN ESD7L5.0 Top layer Other layer D+ GND_DRAIN NC StdA_SSRX+ Lines Capacitance (pF) Package Size (mm) 8 4 4 2 0.12 0.3 0.4 0.5 UDFN-18 UFDN-10 UFDN-10 SOT-723 ESD7x04 — 0.3 pF, 2 Layer Routing (ESD7004 or ESD7014; ESD7L5.0 for D+, D- Lines)...

eSATA Two High Speed Pairs, Low Capacitance ESD Protection Key Requirement • Cap < 0.4 pF Features • 0.3 pF • Flow through routing • Industry leading low clamping voltage GND ESD7004 ESD7104 A+ A- I/O 1 I/O 2 I/O 3 I/O 4 GND BB+ = GND ESD7x04 Device ESD7104 ESD7004 Lines Capacitance (pF) Package Size (mm) 4 4 0.3 0.4 UFDN-10 UFDN-10 2.5 x 1.0 2.5 x 1.0 Without ESD Page 10 eSATA 3.0 @ 6 Gb/s With ESD Circuit Protection Solutions

Parallel Interfaces for Cameras and Displays Parallel Intefaces from 4 to 12 Lines, Low Pass LC Filters + ESD Protection Key Requirement D1 D2 D3 D4 D5 D6 D7 D8 • F3dB > 250 MHz Features • 4/6/8 Channel LC EMI+ESD • –35 dB Stop Band Attenuation From 700 MHz • 700 MHz Stopband for 4G LTE • 0.4 mm pin pitch • 0.55 max package height D1 D2 D3 D4 D5 D6 D7 D8 Flex Cable Connector Camera Module or LCD Controller EMI720x, CM1693, CM1457 Series Typical Interface 700 MHz 0.0 EMI7204 -10.0 CM1693 CM1457 S21 (dB) -20.0 -30.0 -40.0 -50.0 -60.0 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 Frequency (Hz) Series...