MBE Solutions Modular MBE Systems LAB-10 & EVO-25/-50 & PRO-75/100 • Growth System Solutions for all Fields of Application • Excellent Sample Thickness & Doping Homogenity • Layer Growth with Outstanding Performance • Low Background Doping Level • Excellent Carrier Density & Mobility • Very Low Defect Density

Photo supported by: Leibniz-Institut für Festkörperund Werkstoffforschung Dresden (IFW)

n a SINGLE System For more than 10 years Omicron has continuously focussed on the increasing demands of the highest-purity and highest quality epitaxial layer growth. This is now reflected in the next generation MBE series the LAB-, EVO-, and PRO-MBE Series. The new and innovative MBE systems allows for epitaxial layer growth of highest quality. Various system layouts are dedicated to suit the researcher’s demands, such as III-V, III-N, II-VI, metal oxide or pure metal layer growth. The new MBE-series of systems fulfil the most stringent requirements of modern nanotechnology research. Therefore...

Features of the Standard MBE System Family Growth applications Substrate size Number of effusion cells and size Pumping system • Metal MBE growth • Semiconductor growth • Magnetic materials growth • Oxide MBE growth • Organic MBE Omicron standard sample plates Up to 7 effusion cells with cell capacity from 10 cm3 up to 35 cm3 for layer growth Large pumping port for high pumping speed and true UHV using Turbo-, TSP- and IGPpumps (smaller effusion cell volumes from 1.5 cm3 to 5 cm3 for doping applications) • Metal MBE growth • Semiconductor growth • Magnetic materials growth • Oxide MBE growth...

Source to substrate orientation In-Vacuum length for effusion cells Sample manipulator options Further details* • Source angle tilt with respect to sample normal: 18° Cooling, heating, e-beam heating, ultra high temperature • Easy & intuitive to operate growth control software • Fast & reliable sample transfer • Excellent performance • Low cost of ownership • Rotary shutters for effusion cells High temperature sample heating with Ta-Wire, W-Wire, SiC or PG-Heater • Easy & intuitive to operate growth control software • Fast & reliable sample transfer • Excellent performance • Low cost of ownership...

Just a few MBE Systems... PRO-75 MBE System PRO-75 Metal Oxide system for 3 inch substrates with a high temperature oxygen resistant SiC heater. The system is equipped with a number of effusion cells and it is designed to accept e-beam evaporators with flux feedback regulation. RHEED for in-situ growth control is also possible. The system is controlled using the EPI-Soft process control software. State-of-the-Art PRO-75 III-N MBE system for 3 inch sized substrates with an additional insitu VT SPM directly attached. The system is equipped with various effusion cells and doping sources for III-V...

PRO-100 III-V MBE system for high-end quality film growth on 4 inch wafers. The system is equipped with effusion cells for Gallium, Indium, Aluminium, a valved Arsenic cracker source, doping sources, RHEED, beam flux monitor and EPISoft process control software. EVO-25 III-N MBE system for 1 inch sized substrates equipped with effusion cells for Gallium, Indium, Aluminium, Atomic Nitrogen using a RF-Plasma cracker source, a valved Arsenic cracker source, doping sources, RHEED and EPI-Soft process control software. PRO-100 MBE (4”) PVD, ALD, Sputtering & Analysis System Combined SiGe-MBE, metal...

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