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New Etching Options

New Etching Options

New Etching Options

Product catalog summary
Overview
The New Etching Options (NEO) enhance etching processes by increasing etching speed by up to 25%, achieving line/space structures of less than 50 μm, and attaining etching factors greater than 6. These advancements are applicable to both differential etching and conductor track etching, and existing SCHMID CombiLine and PremiumLine etching modules can be retrofitted with these options.
Key Features
  • Etching with CuCl2: Capable of etching line/space structures smaller than 50 μm.
  • Steep Conductor Edges: Achieves an etching factor greater than 6, exemplified by a copper layer of 23 μm.
  • Uniform Differential Etching: Ensures copper removal of 40 μm with a standard deviation of less than 0.90.
  • Process Capability Index (CpK): Greater than 1.60, indicating high process capability.
Technical Details
  • Vacuum Etching: Utilizes suction lances between nozzle pipes to minimize puddling effects, ensuring a uniform etching rate and reduced chemical consumption.
  • Nozzle Configuration: Offers maximum flexibility with optimized nozzle configuration, allowing adaptation to various designs and improving etching results with up to 4 bar spraying pressure.
  • Optimized Transport System: Features improved placement of transport disc rollers, enhancing the drainage of process chemistry and reducing puddling effects.
Performance Metrics
  • Cu Reduction: Standard deviation of less than 0.9.
  • Etching Capability: CpK greater than 1.6.
  • Etching Factor: Greater than 6.0.
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Catalog excerpts

New Etching Options-1

For perfect etching results An etching speed increased by up to 25 %, line/space structures of less than 50 Um and etching factors greater than 6: The New Etching Options (NEO) enable a perfect etching process with qualities that were considered unachievable until recently. For both differential etching and conductor track etching. Existing SCHMID CombiLine and PremiumLine etching modules can be retrofitted. ■ Etching with CuCl2 of line/space < 50 Um ■ Steep conductor edges: e.g. copper layer 23 Um ; etching factor > 6 ■ Uniform differential etching: copper removal 40 Um ; StDev < 0,90 ■ CpK > 1,60

 Open the catalog to page 1
New Etching Options-2

NEW ETCHING OPTIONS (NEO) Details Vacuum Etching The vacuum etching forms the key component of the New Etching Options. To minimize the puddling effect suction lances are installed between the nozzle pipes which take up the used etching medium and lead it into the module tank. Powerful vacuum blowers generate constant vacuum. Unlike with water jet pumps the vacuum never collapses - no matter whether the height-adjustable suction lances take in used etching medium or false air. The result is an absolutely uniform etching rate and less chemistry consumption. Nozzle Configuration Maximum flexibility:...

 Open the catalog to page 2

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