Catalog excerpts
Revision 0.1 (August 03) > - First Copy Revision 0.2 (Dec 04) > - Add C-die, D-bin Revision 0.3 (Mar 05) > - Add 512Mb XDR DRAM Revision 0.4 (Dec 05) > - Delete code 17 in organization Revision 0.5 (Mar. 06) > - Add E-die XDR is a trade mark of Rambus Inc. size="-1">
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Speed Y: Package TypeTemperature & Power RevisionBankOrganizationDensity & RefreshProductDRAMSAMSUNG Memory Interface (V > DD ) M : 1st Gen. C : 4th Gen. E : 6th Gen. F : 7th Gen. 3. Product4. Density & Refresh 5. Organization 6. Bank7. Interface ( V XDR DRAM : BOC lead free 54 : 256M, 16K/16ms(0.98us) 50 : 512M, 32K/16ms(0.49us) : Commercial, Normal Power 02 : x2 04: x4 08: x8 16: x16 > RAC , t > RC )10. Temperature & Power 1. SAMSUNG Memory : K2. DRAM : 4 : for Daisy chain Sample : 2.4Gbps, 36ns, 16cycles 4: 8 Banks : 3.2Gbps, 35ns, 20cycles : 3.2Gbps, 35ns, 24cycles : 4.0Gbps, 28ns ,...
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