March, 2016 RVS47N60PW/RVS47N60PN 600V N-Channel MOSFET SJ-FET RVS47N60PW/RVS47N60PN 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • Multi-Epi process SJ-FET • 650V @TJ = 150℃ • Typ. RDS(on) = 60mΩ • Ultra Low Gate Charge (typ. Qg = 64nC) • 100% avalanche tested Absolute Maximum Ratings Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous(TC = 100℃) Drain Current- Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive AvalancheEnergy (Note 1) Peak Diode Recovery dv/dt Drain Source voltage slope (Vds=480V) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75. Thermal Characteristics Thermal Resistance, Junction-to-Case RθCS RθJA Thermal Resistance, Case-to-Sink Typ. Thermal Resistance

Electrical Characteristics TC = 25℃ unless otherwise noted Off Characteristics BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time...

Typical Performance Characteristics Safe operating area TC=25 ℃ Max. transient thermal impedance Z(thJC)=f(tp); parameter D=tp/T Power dissip

Typical Performance Characteristics Typ. drain-source on-state resistance Typ. drain-source on-state resistance

Typical Performance Characteristics Avalanche energy Forward characteristics of reverse diode Drain-source breakdown voltage

Typical Performance Characteristics Typ. Coss stored energy

Test circuits Switching times test circuit for inductive load Switching time waveform Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Switching times test circuit and waveform for inductive load

Test circuits Test circuit for diode characteristics Diode recovery waveform Test circuit and waveform for diode characteristics

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