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RVS47N60PN

Product catalog summary

Description
SJ-FET is a new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates and higher avalanche energy, making it suitable for AC/DC power conversion in switching mode operations for higher efficiency.

Features

Multi-Epi process SJ-FET
650V @TJ = 150℃
Typical RDS(on) = 60mΩ
Ultra Low Gate Charge (typ. Qg = 64nC)
100% avalanche tested

Absolute Maximum Ratings

Drain-Source Voltage (VDSS): 600 V
Continuous Drain Current (ID): 47 A at TC=25℃, 29 A at TC=100℃
Pulsed Drain Current (IDM): 140 A
Gate-Source Voltage (VGSS): ±30 V
Single Pulsed Avalanche Energy (EAS): 1135 mJ
Operating and Storage Temperature Range (TJ, TSTG): -55 to +150 ℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case (RθJC): 0.32 ℃/W
Thermal Resistance, Junction-to-Ambient (RθJA): 62 ℃/W

Electrical Characteristics

Drain-Source Breakdown Voltage (BVDSS): 600 V at TJ = 25℃, 650 V at TJ = 150℃
Zero Gate Voltage Drain Current (IDSS): 10 µA at TJ = 150℃
Gate Threshold Voltage (VGS(th)): 2.5 - 4.5 V
Static Drain-Source On-Resistance (RDS(on)): 60 - 70 mΩ

Dynamic Characteristics

Input Capacitance (Ciss): 3250 pF
Output Capacitance (Coss): 910 pF
Reverse Transfer Capacitance (Crss): 27 pF

Switching Characteristics

Turn-On Delay Time (td(on)): 16 ns
Turn-Off Delay Time (td(off)): 83 ns
Total Gate Charge (Qg): 64 nC

Diode Characteristics

Maximum Continuous Drain-Source Diode Forward Current (IS): 47 A
Drain-Source Diode Forward Voltage (VSD): 0.9 - 1.5 V

Package Outline

TO-247 and TO-3P packages available

Disclaimer
RONGTECH reserves the right to make changes to improve reliability, function, or design. The information provided is not a guarantee of conditions or characteristics and is not intended for use in critical applications.

Catalog excerpts

March, 2016 RVS47N60PW/RVS47N60PN 600V N-Channel MOSFET SJ-FET RVS47N60PW/RVS47N60PN 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low onresistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. • Multi-Epi process SJ-FET • 650V @TJ = 150℃ • Typ. RDS(on) = 60mΩ • Ultra Low Gate Charge (typ. Qg = 64nC) • 100% avalanche tested Absolute Maximum Ratings Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous(TC = 100℃) Drain Current- Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive AvalancheEnergy (Note 1) Peak Diode Recovery dv/dt Drain Source voltage slope (Vds=480V) Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75. Thermal Characteristics Thermal Resistance, Junction-to-Case RθCS RθJA Thermal Resistance, Case-to-Sink Typ. Thermal Resistance

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Electrical Characteristics TC = 25℃ unless otherwise noted Off Characteristics BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time...

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Typical Performance Characteristics Safe operating area TC=25 ℃ Max. transient thermal impedance Z(thJC)=f(tp); parameter D=tp/T Power dissip

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Typical Performance Characteristics Typ. drain-source on-state resistance Typ. drain-source on-state resistance

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Typical Performance Characteristics Avalanche energy Forward characteristics of reverse diode Drain-source breakdown voltage

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Typical Performance Characteristics Typ. Coss stored energy

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Test circuits Switching times test circuit for inductive load Switching time waveform Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Switching times test circuit and waveform for inductive load

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Test circuits Test circuit for diode characteristics Diode recovery waveform Test circuit and waveform for diode characteristics

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RONGTECH reserves the right to make changes WITHOUT further notice to any products herein to improve reliability, function, or design. For documents and material available from this datasheet, RONGTECH does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application...

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RVS47N60PN

RVS47N60PN

Catalog excerpts

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