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RTU600SG120FA2

Product catalog summary

Overview: The document provides technical specifications and characteristics for the GPU600SG120D2, a 1200V/600A single switch IGBT module designed by Rongtech Industry (Shanghai) Inc. It is suitable for applications such as welding, inductive heating, UPS, and other high-frequency applications.

Features:

1200V/600A with a typical VCE(sat) of 3.0V.
Ultrafast switching speed and excellent short circuit ruggedness.
Single module with a 62mm size.

Absolute Maximum Ratings:

Collector to Emitter Voltage (VCES): 1200V
Continuous Gate to Emitter Voltage (VGES): ±30V
Continuous Collector Current (IC): 1200A at 25°C, 600A at 100°C
Maximum Power Dissipation (PD): 2660W at 25°C
Short Circuit Withstand Time: >10 µs
Operating Junction Temperature Range: -40 to +150°C

Electrical Characteristics of IGBT:

Collector to Emitter Breakdown Voltage (BVCES): 1200V
Collector to Emitter Leakage Current (ICES): 5mA
Gate Threshold Voltage (VGE(th)): 4.5V to 5.7V
Collector to Emitter Saturation Voltage (VCE(sat)): 3.00V at 25°C, 3.60V at 125°C

Switching Characteristics of IGBT:

Turn-on Delay Time (td(on)): 140ns at 25°C, 150ns at 125°C
Turn-on Rise Time (tr): 120ns at 25°C, 125ns at 125°C
Turn-off Delay Time (td(off)): 870ns at 25°C, 920ns at 125°C
Turn-off Fall Time (tf): 120ns at 25°C, 135ns at 125°C
Turn-on Switching Loss (Eon): 15.5mJ at 25°C, 25.0mJ at 125°C
Turn-off Switching Loss (Eoff): 43.0mJ at 25°C, 52.5mJ at 125°C

Electrical and Switching Characteristics of Freewheeling Diode:

Diode Forward Voltage (VF): 1.90V to 2.20V at 25°C
Diode Reverse Recovery Time (trr): 230ns at 25°C, 320ns at 125°C
Diode Peak Reverse Recovery Current (Irr): 450A at 25°C, 590A at 125°C
Diode Reverse Recovery Charge (Qrr): 56.5nC at 25°C, 98.0nC at 125°C
Diode Reverse Recovery Energy (Err): 25.0mJ at 25°C, 37.5mJ at 125°C

Module Characteristics:

Isolation Voltage (Viso): 2500V
Thermal Resistance, Junction-to-Case (RθJC): 0.047°C/W for IGBT, 0.057°C/W for Diode
Case-To-Sink Thermal Resistance (RθCS): 0.1°C/W
Power Terminals Screw: M4 (1.0 to 2.0 N·m), M6 (3.0 to 5.0 N·m)
Mounting Screw: M6 (4.0 to 6.0 N·m)
Weight: 320g

Figures and Graphs: The document includes various figures illustrating output characteristics, switching losses, transient thermal impedance, and forward characteristics of the diode. These figures provide visual insights into the performance and operational parameters of the IGBT and diode under different conditions.

Catalog excerpts

Rongtech Industry (ShangHai) Inc., 1200V/600A Single Switches Features：     1200V600A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 62mm single module General Applications： Rongtech ’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current

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Rongtech Industry (ShangHai) Inc., Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer...

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Rongtech Industry (ShangHai) Inc., Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M4 Power Terminals Screw: M6

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Rongtech Industry (ShangHai) Inc., Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=1.1Ω,RGoff=1.1Ω,VCE=600V

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Rongtech Industry (ShangHai) Inc., Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=600A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=1.1Ω，Tvj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ，

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Rongtech Industry (ShangHai) Inc., Fig 9. switching losses Diode, Err=f(IF),,RGon=1.1Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=600A,VCE=600V

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