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RTU50HF120FA1

Product catalog summary

Overview: The GPU50HF120D1 is a 1200V/50A half-bridge IGBT module designed for high-frequency applications such as welding, inductive heating, and UPS systems. It features ultrafast switching speed and excellent short circuit ruggedness.

Specifications:

Voltage and Current Ratings: Collector to Emitter Voltage (VCES) is 1200V, Continuous Collector Current (IC) is 100A at 25°C and 50A at 100°C.
Temperature Ratings: Maximum Junction Temperature (TJ) is 150°C, Operating Junction Temperature Range is -40 to +150°C, and Storage Temperature Range is -40 to +125°C.
Power Dissipation: Maximum Power Dissipation is 285W at 25°C.

Electrical Characteristics:

IGBT Characteristics: Collector to Emitter Breakdown Voltage is 1200V, Gate Threshold Voltage ranges from 4.5V to 5.7V, and Collector to Emitter Saturation Voltage is 3.0V at 25°C.
Switching Characteristics: Turn-on Delay Time is 20ns at 25°C, Turn-off Delay Time is 280ns at 25°C, and Total Gate Charge is 430nC.
Diode Characteristics: Forward Voltage is 1.90V at 25°C, Reverse Recovery Time is 110ns at 25°C, and Reverse Recovery Energy is 0.80mJ at 25°C.

Thermal and Mechanical Characteristics:

Thermal Resistance: Junction-to-Case Thermal Resistance for IGBT is 0.44°C/W and for Diode is 0.80°C/W.
Isolation Voltage: 2500V for all terminals shorted.
Mechanical Specifications: Power Terminals Screw is M5 with torque 3.0 to 5.0 N·m, and Mounting Screw is M6 with torque 4.0 to 6.0 N·m. The module weight is 160g.

Figures and Graphs: The document includes various figures illustrating output characteristics, switching losses, and thermal impedance of the IGBT and diode, providing insights into performance under different conditions.

Catalog excerpts

Rongtech Industry (ShangHai) Inc., 1200V50A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 34mm half bridge module General Applications： Rongtech ’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current A Diode Continuous Forward Current Diode Maximum Forward Current

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Rongtech Industry (ShangHai) Inc., Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer...

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Rongtech Industry (ShangHai) Inc., Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M5

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Rongtech Industry (ShangHai) Inc., Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=13Ω,RGoff=13Ω,VCE=600V

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Rongtech Industry (ShangHai) Inc., Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=50A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE), VGE=± 15V,RGoff=10Ω，Tvj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ，IF=f(VF)

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Rongtech Industry (ShangHai) Inc., Fig 9. switching losses Diode, Err=f(IF),,RGon=10Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=50A,VCE=600V

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