RTU300HF120FA2
7Pages

Catalog excerpts

Rongtech Industry (ShangHai) Inc., 1200V300A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 62mm half bridge module General Applications： Rongtech ’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current

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Rongtech Industry (ShangHai) Inc., Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse...

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Rongtech Industry (ShangHai) Inc., Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M6

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Rongtech Industry (ShangHai) Inc., Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=3.3Ω,RGoff=3.3Ω,VCE=600V

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Rongtech Industry (ShangHai) Inc., Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=300A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=3.3Ω，Tvj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ，

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Rongtech Industry (ShangHai) Inc., Fig 9. switching losses Diode, Err=f(IF),,RGon=3.3Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=300A,VCE=600V

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