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RTU200HF120FA2

Product catalog summary

Overview: The GPU200HF120D2 is a 1200V/200A IGBT module designed for high-frequency applications such as welding, inductive heating, and UPS systems. It features ultrafast switching speed and excellent short circuit ruggedness in a 62mm half-bridge module.

Specifications:

IGBT Ratings: Collector to Emitter Voltage (VCES) is 1200V, Continuous Collector Current (IC) is 400A at 25°C and 200A at 100°C, and Maximum Power Dissipation is 860W at 25°C.
Diode Ratings: Repetitive Peak Reverse Voltage (VRRM) is 1200V, Continuous Forward Current (IF) is 400A at 25°C and 200A at 100°C.

Electrical Characteristics:

IGBT: Collector to Emitter Breakdown Voltage is 1200V, Gate Threshold Voltage ranges from 4.5V to 5.7V, and Collector to Emitter Saturation Voltage is 3.00V at 25°C.
Switching Characteristics: Turn-on Delay Time is 90ns at 25°C, Turn-off Delay Time is 670ns at 25°C, and Total Gate Charge is 1740nC.
Diode: Forward Voltage is 1.90V at 25°C, Reverse Recovery Time is 160ns at 25°C, and Reverse Recovery Energy is 5.50mJ at 25°C.

Thermal and Mechanical Characteristics:

Thermal Resistance, Junction-to-Case for IGBT is 0.145°C/W and for Diode is 0.157°C/W.
Isolation Voltage is 2500V, and the module weight is 315g.

Figures and Graphs:

Figures illustrate output characteristics, transfer characteristics, switching losses, and thermal impedance for both IGBT and Diode.

Catalog excerpts

Rongtech Industry (ShangHai) Inc., 1200V200A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 62mm half bridge module General Applications： Rongtech ’s IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current

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Rongtech Industry (ShangHai) Inc., Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse Transfer...

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Rongtech Industry (ShangHai) Inc., Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Case-To-Sink(Conductive Grease Applied) Power Terminals Screw: M6

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Rongtech Industry (ShangHai) Inc., Fig 1. output characteristic IGBT， IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT， IC=f(VCE),Tj=125℃ Fig 3. transfer characteristic IGBT， IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V

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Rongtech Industry (ShangHai) Inc., Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=200A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff=4.7Ω，Tj=125℃ Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode ， IF=f(VF)

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Rongtech Industry (ShangHai) Inc., Fig 9. switching losses Diode, Err=f(IF),,RGon=4.7Ω,VCE=600V Fig 10. switching losses Diode, Err=f(RG),IF=200A,VCE=600V

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