RTU100HF120FA1
7Pages

Catalog excerpts

GPU100HF120D1 1200V/100A 2 in one-package Features 1200V100A,VCE(sat)(typ.)=3.0V Ultrafast switching speed Excellent short circuit ruggedness 34mm half bridge module General Applications IGBTs offer ultrafast switching speed for application such as welding, inductive heating, UPS and other high frequency applications Equivalent Circuit Schematic Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage Continuous Gate to Emitter Voltage Continuous Collector Current Pulse Collector Current Maximum Power Dissipation (IGBT) Short Circuit Withstand Time Maximum IGBT Junction Temperature Maximum Operating Junction Temperature Range Storage Temperature Range Absolute Maximum Ratings of Freewheeling Diode VRRM Repetitive Peak Reverse Voltage Preliminary Data Diode Continuous Forward Current Diode Maximum Forward Current

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Rongtech Industry (ShangHai) Inc., Electrical Characteristics of IGBT at TJ = 25° (Unless Otherwise Specified) C Parameter Test Conditions Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Gate to Emitter Leakage Current Gate Threshold Voltage Collector to Emitter Saturation Voltage (Module Level) Switching Characteristics of IGBT TJ = 25° C TJ = 125° C Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Turn-on Switching Loss Turn-off Switching Loss Total Gate Charge Integrated gate resistor Input Capacitance Output Capacitance Reverse...

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Rongtech Industry (ShangHai) Inc., Electrical and Switching Characteristics of Freewheeling Diode VF Diode Forward Voltage Diode Peak Reverse Recovery Current Diode Reverse Recovery Energy Diode Reverse Recovery Charge Diode Reverse Recovery Time Thermal Resistance, Junction-to-Case (Diode) Module Characteristics Parameter Case-To-Sink(Conductive Grease Applied) Isolation Voltage (All Terminals Shorted),f = 50Hz, 1minute Power Terminals Screw: M5

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Rongtech Industry (ShangHai) Inc., Fig 1. output characteristic IGBT IC=f(VCE),VGE=15V Fig 2. output characteristic IGBT IC=f(VCE),Tj=125 Fig 3. transfer characteristic IGBT IC=f(VGE),VCE=20V Fig 4. switching losses IGBT, Eon=f(Ic),Eoff=f(Ic), VGE=± 15V,RGon Goff CE=600V

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Rongtech Industry (ShangHai) Inc., Fig 5. switching losses IGBT, Eon=f(RG),Eoff=f(RG), VGE=± 15V,IC=100A,VCE=600V Fig 7. reverse bias safe operating area IGBT, IC=f(VCE),VGE=± 15V,RGoff Tvj=125 Fig 6. transient thermal impedance IGBT , Zthjc=f(t) Fig 8. forward characteristic of Diode IF=f(VF)

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