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Rongtech Industry (Shanghai) Inc.,
RTR600HF170T9H IGBT module

RTR600HF170T9H IGBT module

Product catalog summary

Introduction
This document provides technical specifications and characteristics for the RTR600H IGBT module by Rongtech, designed for applications such as motor drives, AC and DC servo drivers, wind turbines, and uninterruptible power supplies.

Features

Field Stop Trench Gate IGBT
Short Circuit Rated (10μs)
Low Saturation Voltage
Low Switching Loss
100% RBSOA Tested
Low Stray Inductance
Lead Free, RoHS Compliant

Maximum Rated Values

Collector-Emitter Blocking Voltage (VCES): 1700 V
Gate-Emitter Voltage (VGES): ±20 V
Continuous Collector Current (IC): 600 A
Peak Collector Current (ICM): 950 A
Short Circuit Withstand Time (tSC): >10 μs
Maximum Power Dissipation (PD): 3410 W

Electrical Characteristics

Gate-Emitter Threshold Voltage (VGE(th)): 4.5 - 6.5 V
Collector-Emitter Saturation Voltage (VCE(sat)): 1.80 V at 25℃, 2.30 V at 150℃
Collector-Emitter Leakage Current (ICES): 1 mA at 25℃
Gate-Emitter Leakage Current (IGES): 400 nA at 25℃

Switching Characteristics

Turn-on Delay Time (td(on)): 0.61 μs at 25℃
Turn-off Delay Time (td(off)): 0.50 μs at 25℃
Turn-on Switching Loss (Eon): 171 mJ at 25℃
Turn-off Switching Loss (Eoff): 160 mJ at 25℃

Thermal Characteristics

IGBT Thermal Resistance: Junction-To-Case (RθJC): 0.044 ℃/W
Diode Thermal Resistance: Junction-To-Case (RθJC): 0.077 ℃/W

Diode Characteristics

Repetitive Peak Reverse Voltage (VRRM): 1700 V
Diode Continuous Forward Current (IF): 600 A
Forward Voltage (VFM): 2.70 V at 25℃

Module Characteristics

Isolation Voltage (Viso): 3.4 kV
Maximum Junction Temperature (TJ): 175 ℃
Storage Temperature Range (Tstg): -40 to +125 ℃

Graphs and Figures

Figures illustrate typical saturation voltage characteristics, output characteristics, forward characteristics of FWD, NTC temperature characteristics, transient thermal impedance, and reverse bias safe operation area.

Revision History

06/13/2017: Initial release
01/29/2018: Revised electrical parameters
06/20/2018: Revised Isolation Voltage (Viso) Value

Disclaimer
Rongtech provides this information as accurate and reliable but does not guarantee its completeness or accuracy. Changes to specifications and product descriptions may occur without notice.

Catalog excerpts

RTR600HF170T9HIGBT ModuleFeatures: • Field Stop Trench Gate IGBT • Lead Free, Compliant with RoHS Requirement Applications: • Inverter for Motor Driver • AC and DC Servo Driver Amplifier • Wind Turbines • Uninterruptible Power Supply www.ronatechpower.com 2018 Ronatech All riahts reserved

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Fig.5 Transient Thermal Impedance (IGBT) Time(s) Fig.6 Transient Thermal Impedance (Diode) VGE=± 15V,RGoff=1ohm, TJ =150℃ Module Chip Fig.7 Reverse Bias Safe Operation Area (RBSOA) www.rongtechpower.com 2018 Rongtech All rights reserved

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Revision History Date Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied...

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RTR600HF170T9H IGBT module

RTR600HF170T9H IGBT module

Catalog excerpts

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