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Rongtech Industry (Shanghai) Inc.,
RTM800FF65HP2S IGBT module

RTM800FF65HP2S IGBT module

Product catalog summary

Overview: The RTM800FF65HP2S is an IGBT module designed for automotive applications, featuring a field stop trench gate IGBT, low saturation voltage, and low switching loss. It is compliant with RoHS requirements and has been tested for 100% RBSOA.

Features: The module is automotive qualified based on AEC_Q101 standards, offers improved turn-off voltage stress, and is short circuit rated for over 10μs. It includes an AlSiC baseplate and low stray inductance.

Applications: Suitable for use in electrical vehicles, motor drives, and high power converters.

Maximum Rated Values: The module supports a collector-emitter blocking voltage of 650 V, gate-emitter voltage of ±20 V, and a continuous collector current of 700 A at 25℃. It can handle a repetitive peak collector current of 1600 A at 175℃.

Electrical Characteristics: The gate-emitter threshold voltage ranges from 5.0 to 6.5 V, and the collector-emitter saturation voltage varies with temperature, reaching up to 1.35 V at 150℃. The module also features low leakage currents and specific capacitance values.

Switching Characteristics: The module exhibits consistent turn-on and turn-off delay times across different temperatures, with minimal rise and fall times. Switching losses are detailed for various conditions, indicating efficient performance.

Diode Characteristics: The diode within the module has a repetitive peak reverse voltage of 650 V and a maximum forward current of 1600 A. Reverse recovery times and energies are specified for different temperatures.

Thermal and Mechanical Specifications: The module's thermal resistance is specified for both the IGBT and diode, with a maximum junction temperature of 175℃. The module is designed with an AlSiC baseplate and internal AlN isolation.

Graphs and Figures: The document includes graphs illustrating typical saturation voltage characteristics, forward characteristics of the FWD, switching losses, and capacitance characteristics, providing visual insights into performance under various conditions.

Additional Information: The document includes a disclaimer about the accuracy of the information and notes the company's right to make changes to the specifications without notice.

Catalog excerpts

RTM800FF65HP2SIGBT Module Features: • Automotive Qualified Base on AEC_Q101 • Field Stop Trench Gate IGBT • Improved Turn off Voltage Stress • AlSiC Baseplate • Lead Free, Compliant with RoHS Requirement • Electrical Vehicles • Motor Drives • High Power Converters www.rongtechpower.com 2018 Rongtech All rights reserve

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Ic(A) Fig.5 Typical Switching Loss vs. Collector Current IF(A) Fig.6 Typical Switching Loss vs. Forward Current RG(ohm) Fig.7 Typical Switching Losses vs. Gate Resistance RG(ohm) Fig.8 Typical Switching Losses vs. Gate Resistance www.rongtechpower.com 2018 Rongtech All rights reserv

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Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication...

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RTM800FF65HP2S IGBT module

RTM800FF65HP2S IGBT module

Catalog excerpts

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