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Rongtech Industry (Shanghai) Inc.,
RTM600FF75C8S 3 phase IGBT module

RTM600FF75C8S 3 phase IGBT module

Product catalog summary

Overview: The RTM600FF75C8S is an IGBT module designed for automotive applications, featuring a field stop trench gate IGBT, low saturation voltage, and low switching loss. It is compliant with RoHS requirements and is suitable for use in electric vehicles, motor drives, and high power converters.

Specifications: The module has a collector-emitter blocking voltage of 750 V and a gate-emitter voltage of ±20 V. It supports a continuous collector current of 600 A at 80°C and a repetitive peak collector current of 1200 A at 175°C. The short circuit withstand time is greater than 10 μs, and the maximum power dissipation per IGBT is 714 W at 75°C.

Electrical Characteristics: The gate-emitter threshold voltage ranges from 5.0 V to 6.8 V at 25°C. The collector-emitter saturation voltage varies with temperature and current, with a maximum of 1.60 V at 175°C for 600 A. The module also features low leakage currents and specific capacitance values for input, output, and reverse transfer.

Switching Characteristics: The module exhibits specific turn-on and turn-off delay times, rise and fall times, and switching losses at different temperatures and conditions. For instance, the turn-on switching loss at 25°C is 18.6 mJ, increasing to 23.4 mJ at 175°C.

Diode Characteristics: The diode within the module has a repetitive peak reverse voltage of 750 V and a continuous forward current of 600 A. The forward voltage varies with temperature and current, with a maximum of 1.70 V at 25°C for 450 A.

Thermal and Mechanical Characteristics: The module's thermal resistance from junction to cooling fluid is 0.096 K/W for the IGBT and 0.136 K/W for the diode. The module baseplate is made of AlSiC, and it has an isolation voltage of 4.2 kV. The weight of the module is 380 g.

Graphs and Figures: The document includes various graphs illustrating typical saturation voltage characteristics, output characteristics, forward characteristics of the FWD, NTC temperature characteristics, and switching losses versus collector current, forward current, and gate resistance.

Additional Information: The document includes a disclaimer about the accuracy and reliability of the information provided and reserves the right to make changes to the specifications and product descriptions without notice.

Catalog excerpts

Preliminary Data RTM600FF75C8SIGBT ModuleFeatures: • Automotive Qualified Base on AEC_Q101 • Field Stop Trench Gate IGBT • Improved Turn off Voltage Stress • Short Circuit Rated>10|js • AlSiC Baseplate • Lead Free, Compliant with RoHS Requirement • Electrical Vehicles • Motor Drives • High Power Converters www.rongtechpower.com 2018 Rongtech All rights reserv

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Announcement Information in this document is believed to be accurate and reliable. However, Rongtech does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to Make Changes Rongtech reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication...

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RTM600FF75C8S 3 phase IGBT module

RTM600FF75C8S 3 phase IGBT module

Catalog excerpts

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